SPB80N03S2L-05

SPB80N03S2L-05 Datasheet


SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05

Part Datasheet
SPB80N03S2L-05 SPB80N03S2L-05 SPB80N03S2L-05 (pdf)
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SPI80N03S2L-05 SPI80N03S2L-05 SPI80N03S2L-05
PDF Datasheet Preview
Power-Transistor

Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x RDS on P- TO262 -3-1
product FOM
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated

SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05

Product Summary

VDS RDS on ID
30 V 80 A

P- TO263 -3-2

P- TO220 -3-1

Type SPP80N03S2L-05 SPB80N03S2L-05 SPI80N03S2L-05

Package
Ordering Code

P- TO220 -3-1 Q67042-S4033

P- TO263 -3-2 Q67042-S4032

P- TO262 -3-1 Q67042-S4093

Marking 2N03L05

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Continuous drain current 1

TC=25°C

Value

Pulsed drain current

ID puls

TC=25°C

Avalanche energy, single pulse

ID=80 A , VDD=25V,

Repetitive avalanche energy, limited by Tjmax2 EAR
dv/dt

IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage Power dissipation

TC=25°C

Operating and storage temperature IEC climatic category DIN IEC 68-1

VGS Ptot

Tj , Tstg
±20 167
+175 55/175/56

Unit A
kV/µs V W °C
2003-01-17

Thermal Characteristics Parameter

Characteristics Thermal resistance, junction - case SMD version, device on PCB:
min. footprint 6 cm2 cooling area 3

SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05

Values

Unit
min. typ. max.

RthJC RthJA

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.
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Datasheet ID: SPB80N03S2L-05 638619