SPD30N03S2L10GBTMA1
SPD30N03S2L10GBTMA1 Datasheet
SPD30N03S2L-10G PG-TO252-3
| Part | Datasheet |
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SPD30N03S2L10GBTMA1 |
SPD30N03S2L10GBTMA1 (pdf) |
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| Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS on • Excellent Gate Charge x RDS on product FOM • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-free lead plating RoHS compliant Type Package SPD30N03S2L-10G PG-TO252-3 Marking 2N03L10 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=30 A , VDD=25V, IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg SPD30N03S2L-10 G Product Summary RDS on PG-TO252-3 Value 30 120 ±20 100 +175 55/175/56 Unit A kV/µs V W °C 02-09-2008 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPD30N03S2L-10 G Values Unit min. typ. max. |
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