SPI70N10L
SPI70N10L Datasheet
SPI70N10L SPP70N10L,SPB70N10L
| Part | Datasheet |
|---|---|
SPI70N10L |
SPI70N10L (pdf) |
| Related Parts | Information |
|---|---|
SPP70N10L |
SPP70N10L |
|
SPB70N10L |
SPB70N10L |
| PDF Datasheet Preview |
|---|
| Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated P-TO262-3-1 SPI70N10L SPP70N10L,SPB70N10L P-TO263-3-2 Product Summary 100 V RDS on P-TO220-3-1 P-TO220-3-1 Type SPP70N10L SPB70N10L SPI70N10L Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67040-S4175 Q67040-S4170 Q67060-S7428 Marking 70N10L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=70 A , VDD=25V, IS=70A, VDS=0V, di/dt=200A/µs Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAR dv/dt VGS Ptot Tj , Tstg Value Unit 50 280 kV/µs ±20 +175 55/175/56 2005-01-12 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 1 SPI70N10L SPP70N10L,SPB70N10L Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter min. Static Characteristics Drain-source breakdown voltage V BR DSS 100 VGS=0V, ID=2mA |
| More datasheets: DS4830EVKIT# | A15322-01 | 60A18-4-RAC | 60A18-8-RAC | MP38872DL-LF-Z | MP38872DL-LF-P | 0HBF0001ZXBASE2 | 0HBF0001ZXCOVER | SPP70N10L | SPB70N10L |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SPI70N10L Datasheet file may be downloaded here without warranties.