SKW30N60HSFKSA1

SKW30N60HSFKSA1 Datasheet

SKW30N60HS

Part	Datasheet
SKW30N60HSFKSA1	SKW30N60HSFKSA1 (pdf)

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SKW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • High ruggedness, temperature stable behaviour • Pb-free lead plating RoHS compliant • Qualified according to JEDEC1 for target applications • Complete product spectrum and PSpice Models : PG-TO-247-3 Type Eoff Marking Package SKW30N60HS 600V 30 480µJ 150°C K30N60HS PG-TO-247-3 Maximum Ratings Parameter Value Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage static transient tp<1µs, D<0.05 Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150°C Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm in. from case for 10s VCE IC ICpuls - IFpuls VGE Ptot Tj , Tstg Tj tl - 41 30 112 41 28 112 ±20 ±30 10 175 260 Unit V A V µs W °C 1 J-STD-020 and JESD-022 2 Allowed number of short circuits <1000 time between short circuits >1s. Power Semiconductors SKW30N60HS Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient Symbol RthJC RthJCD RthJA Conditions Max. Value Unit Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

PDF Datasheet Preview

SKW30N60HS

High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models :

PG-TO-247-3

Type

Eoff

Marking

Package

SKW30N60HS
600V 30 480µJ 150°C K30N60HS PG-TO-247-3

Maximum Ratings

Parameter

Value

Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage static
transient tp<1µs, D<0.05 Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150°C Power dissipation TC = 25°C Operating junction and storage temperature

Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm in. from case for 10s

VCE IC

ICpuls -

IFpuls VGE

Ptot

Tj , Tstg Tj tl -
41 30 112
41 28 112 ±20 ±30 10
175 260

Unit V A

V µs W °C
1 J-STD-020 and JESD-022 2 Allowed number of short circuits <1000 time between short circuits >1s.

Power Semiconductors

SKW30N60HS

Thermal Resistance

Parameter

Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient

Symbol RthJC RthJCD RthJA

Conditions

Max. Value

Unit

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

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Datasheet ID: SKW30N60HSFKSA1 638594