RMPA2259

RMPA2259 Datasheet

RMPA2259

Part	Datasheet
RMPA2259	RMPA2259 (pdf)

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RMPA2259 September 2004 RMPA2259 28dBm WCDMA PowerEdge Power Amplifier Module The RMPA2259 power amplifier module PAM is designed for WCDMA applications. The 2 stage PAM is internally matched to minimize the use of external components and features a low power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT process. • Single positive-supply operation with low power and shutdown modes • 40% linear efficiency at +28dBm average output power • Compact LCC package x 1.5mm • Internally matched to and DC blocked RF input/ output. • High-Power/Low-Power operating modes for extended battery life Device Module Block Diagram VCC1, VCC2 1, 10 COLLECTOR BIAS PA MODULE GND 3, 6, 7, 9, 11 RF IN 2 VREF 5 INPUT MATCHING NETW ORK INTERSTAGE MATCH INPUT STAGE MMIC OUTPUT STAGE INPUT STAGE BIAS OUTPUT STAGE BIAS OUTPUT MATCHING NETW ORK BIAS CONTROL RF OUT 8 VCC = 3.4V nom VREF = 2.85V nom MHz I/O VMODE 4 2004 Fairchild Semiconductor Corporation RMPA2259 Absolute Ratings 1 VCC1, VCC2 VREF VMODE PIN TSTG Parameter Supply Voltage Reference Voltage Power Control Voltage RF Input Power Storage Temperature Range Ratings to +10 -55 to +150 Note 1 No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

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RMPA2259

September 2004

RMPA2259
28dBm WCDMA PowerEdge Power Amplifier Module

The RMPA2259 power amplifier module PAM is designed for WCDMA applications. The 2 stage PAM is internally matched to minimize the use of external components and features a low power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT process.
• Single positive-supply operation with low power and shutdown modes
• 40% linear efficiency at +28dBm average output power
• Compact LCC package x 1.5mm
• Internally matched to and DC blocked RF input/ output.
• High-Power/Low-Power operating modes for extended battery life

Device

Module Block Diagram

VCC1, VCC2 1, 10

COLLECTOR BIAS

PA MODULE

GND 3, 6, 7, 9, 11

RF IN 2

VREF 5

INPUT MATCHING

NETW ORK

INTERSTAGE MATCH

INPUT STAGE

MMIC

OUTPUT STAGE

INPUT STAGE BIAS

OUTPUT STAGE BIAS

OUTPUT MATCHING

NETW ORK

BIAS CONTROL

RF OUT 8

VCC = 3.4V nom VREF = 2.85V nom MHz I/O

VMODE 4
2004 Fairchild Semiconductor Corporation

RMPA2259

Absolute Ratings 1

VCC1, VCC2 VREF VMODE PIN TSTG

Parameter Supply Voltage Reference Voltage Power Control Voltage RF Input Power Storage Temperature Range

Ratings
to +10
-55 to +150

Note 1 No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

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Datasheet ID: RMPA2259 634685