SIDC38D60C6X1SA3

SIDC38D60C6X1SA3 Datasheet

SIDC38D60C6

Part	Datasheet
SIDC38D60C6X1SA3	SIDC38D60C6X1SA3 (pdf)

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SIDC38D60C6 Fast switching diode chip in EMCON 3 -Technology FEATURES • 600V EMCON 3 technology 70 µm chip • soft, fast switching This chip is used for • power module • small temperature coefficient Applications: • drives Chip Type SIDC38D60C6 600V 150A Die Size x mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallization Cathode metallization Die bond Wire bond Reject ink dot size Recommended storage environment 353 pcs Photoimide 3200 nm AlSiCu Ni Ag suitable for epoxy and soft solder die bonding electrically conductive glue or solder 0.65mm max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AIM PMD D CID CLS, L4591M, Edition SIDC38D60C6 Maximum Ratings Parameter VRRM Continuous forward current limited by IF Tjmax Maximum repetitive forward current limited by Tjmax IFRM Operating junction and storage temperature Tj , Tstg 1 depending on thermal properties of assembly Condition Value 600 Unit V Static Electrical Characteristics tested on chip , Tj=25 °C, unless otherwise specified Parameter Conditions Value min. Typ.

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SIDC38D60C6

Fast switching diode chip in EMCON 3 -Technology

FEATURES
• 600V EMCON 3 technology 70 µm chip
• soft, fast switching

This chip is used for
• power module
• small temperature coefficient

Applications:
• drives

Chip Type SIDC38D60C6
600V 150A

Die Size x mm2

Package sawn on foil

MECHANICAL PARAMETER Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallization

Cathode metallization

Die bond Wire bond Reject ink dot size

Recommended storage environment
353 pcs

Photoimide
3200 nm AlSiCu

Ni Ag suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
0.65mm max 1.2mm
store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C

Edited by INFINEON Technologies, AIM PMD D CID CLS, L4591M, Edition

SIDC38D60C6

Maximum Ratings

Parameter

VRRM

Continuous forward current limited by IF

Tjmax

Maximum repetitive forward current limited by Tjmax

IFRM

Operating junction and storage temperature

Tj , Tstg
1 depending on thermal properties of assembly

Condition

Value 600

Unit V

Static Electrical Characteristics tested on chip , Tj=25 °C, unless otherwise specified

Parameter

Conditions

Value min. Typ.

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Datasheet ID: SIDC38D60C6X1SA3 638579