BFR 360T E6327
BFR 360T E6327 Datasheet
BFR360T
| Part | Datasheet |
|---|---|
BFR 360T E6327 |
BFR 360T E6327 (pdf) |
| PDF Datasheet Preview |
|---|
| BFR360T NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to GHz and Pout > 10 dBm Low noise figure dB at GHz 2 1 VPS05996 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR360T Marking Pin Configuration Package SC75 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1 TS 81°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Thermal Resistance Parameter Junction - soldering point2 RthJS 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance Value 6 15 2 35 4 150 -65 150 -65 150 Value Unit V mA mW °C Unit K/W Jun-16-2003 BFR360T Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values min. typ. max. Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 3 V V BR CEO 6 ICES ICBO IEBO 60 130 200 Unit V µA nA µA - |
| More datasheets: B13B-PH-K-S | B16B-PH-K-S | B13B-PH-SM3-TB | S2B-PH-K-S | B4B-PH-K-K(LF)(SN) | DBM-25P-E | DEU9SA197 | 392C3500 | MDM-15PH046B | 2ED020I12-F |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BFR360TE6327 Datasheet file may be downloaded here without warranties.