2ED020I12-F

2ED020I12-F Datasheet

Coreless Transformer Driver IC 2ED020I12-F

Part	Datasheet
2ED020I12-F	2ED020I12-F (pdf)

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IGBT/MOSFET Applications based on Coreless Transformer Driver IC 2ED020I12-F A. Volke1, M. Hornkamp1, B. Strzalkowski2 1eupec GmbH, Max-Planck-Str. 5, D-59581 Warstein, Germany, Tel. +49- 0 2902-764-0 2Infineon Technologies AG, Balanstr. 59, D-81609 Munich, Germany Driver IC’s either for IGBT’s or MOSFET’s are commonly used in several power electronics applications. Here the problem of isolating the high and low side driver stages occurs. Currently almost all of these applications are based on optocouplers, discrete transformers or level-shifters for either safety or functional isolation. This paper presents a new approach based on the coreless transformer driver IC 2ED020I12-F and, furthermore, gives a n outlook on upcoming developments. Coreless Transformer Technology CLT Nowadays the common solution to realize either functional or safety isolation for low and medium power applications is the usage of optocouplers, discrete transformers, or monolithic level-shifters. All of them have their typical advantages and disadvantages which are well known. The primary goal of the coreless transformer technology is to combine these advantages by avoiding at the same time the disadvantages. This means in detail a high insulation capability, no ageing and therefore constant reliability over the projected lifetime, small package size, easy integration of additional logic functions, and cost effective production. The basic principle of the CLT is the implementation of a microplanar transformer embedded within the semiconductor process. The transformer provides the galvanic isolation and signal transmission between input and output stage. Half-bridge driver 2ED020I12-F The development of the driver IC 2ED020I12-F was driven by the idea to improve today’s driver solutions based on integrated circuits like monolithic level shifters or multiple component scenarios of separate driver IC’s and optocouplers or discrete transformers. The 2ED020I12-F contains two drivers for an IGBT or MOSFET half-bridge, whereby the high side is galvanically isolated from the low side part through a coreless transformer system as described before. The main features of the IC are: • Fully operational up to 1200VDC • Drive supply range from 0V to +18V • Drive peak output current of +1A / -2A Due to the used CLT and SPT5 technology short propagation delays of 50ns and a delay mismatch of ±10ns can be achieved. As an additional feature a general purpose operational amplifier and a comparator with open collector output are implemented. Figure 1 Simplified schematic of 2ED020I12-F Figure 2 Block diagram of 2ED020I12-F Driver EMI ruggedness Besides the insulation capability, a further key point necessary for the usage as a driver in an industrial environment is important The ruggedness against high dV/dt disturbance and an overall immunity against the change of external magnetic fields. Concerning the 2ED020I12-F the critical component in terms of EMI seems to be the coreless transformer and associated receiver circuitry. Tests conducted have proved that the 2ED020I12-F is immune against dV/dt of at least 50kV/µs as well as dH/dt greater than 100 A Among other things this m ns is attained by a small coupling capacitance of less than 0.2pF, reduced internal parasitic capacitances and the magnetic shielding of the lead frame. +15V. This requires a closer look at how values like the gate resistor RG, turn-on losses Eon, turnoff losses Eoff, turn-on delay times td_on, and turn- off delay times td_off depend on the driving gate voltage. The gate resistor as one of the main factors in general determines the turn-off losses of an IGBT. To calculate the gate resistor for a specific turn-off loss at unipolar switching the following rule thumb applies: R0 /15 1 3 R−15 /15 factor is derived from the relation VMP − 0V VMP − − 15V assum es that Miller - Plateau voltage VMP has a value between +8V and +10V depending on several factors like the IGBT chip and collector current. Figure 5 proves the rule to be sufficiently

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IGBT/MOSFET Applications based on

Coreless Transformer Driver IC 2ED020I12-F

A. Volke1, M. Hornkamp1, B. Strzalkowski2 1eupec GmbH, Max-Planck-Str. 5, D-59581 Warstein, Germany, Tel. +49- 0 2902-764-0
2Infineon Technologies AG, Balanstr. 59, D-81609 Munich, Germany

Driver IC’s either for IGBT’s or MOSFET’s are commonly used in several power electronics applications. Here the problem of isolating the high and low side driver stages occurs. Currently almost all of these applications are based on optocouplers, discrete transformers or level-shifters for either safety or functional isolation. This paper presents a new approach based on the coreless transformer driver IC 2ED020I12-F and, furthermore, gives a n outlook on upcoming developments.

Coreless Transformer Technology CLT

Nowadays the common solution to realize either functional or safety isolation for low and medium power applications is the usage of optocouplers, discrete transformers, or monolithic level-shifters. All of them have their typical advantages and disadvantages which are well known. The primary goal of the coreless transformer technology is to combine these advantages by avoiding at the same time the disadvantages. This means in detail a high insulation capability, no ageing and therefore constant reliability over the projected lifetime, small package size, easy integration of additional logic functions, and cost effective production. The basic principle of the CLT is the implementation of a microplanar transformer embedded within the semiconductor process. The transformer provides the galvanic isolation and signal transmission between input and output stage.

Half-bridge driver 2ED020I12-F

The development of the driver IC 2ED020I12-F was driven by the idea to improve today’s driver solutions based on integrated circuits like monolithic level shifters or multiple component scenarios of separate driver IC’s and optocouplers or discrete transformers.

The 2ED020I12-F contains two drivers for an IGBT or MOSFET half-bridge, whereby the high side is galvanically isolated from the low side part through a coreless transformer system as described before. The main features of the IC are:
• Fully operational up to 1200VDC
• Drive supply range from 0V to +18V
• Drive peak output current of +1A / -2A

Due to the used CLT and SPT5 technology short propagation delays of 50ns and a delay mismatch of ±10ns can be achieved. As an additional feature a general purpose operational amplifier and a comparator with open collector output are implemented.

Figure 1 Simplified schematic of 2ED020I12-F

Figure 2 Block diagram of 2ED020I12-F

Driver EMI ruggedness

Besides the insulation capability, a further key point necessary for the usage as a driver in an industrial environment is important The ruggedness against high dV/dt disturbance and an overall immunity against the change of external magnetic fields. Concerning the 2ED020I12-F the critical component in terms of EMI seems to be the coreless transformer and associated receiver circuitry. Tests conducted have proved that the 2ED020I12-F is immune against dV/dt of at least 50kV/µs as well as dH/dt
greater than 100 A Among other things this m ns
is attained by a small coupling capacitance of less than 0.2pF, reduced internal parasitic capacitances and the magnetic shielding of the lead frame.
+15V. This requires a closer look at how values
like the gate resistor RG, turn-on losses Eon, turnoff losses Eoff, turn-on delay times td_on, and turn-
off delay times td_off depend on the driving gate voltage.

The gate resistor as one of the main factors
in general determines the turn-off losses of an

IGBT. To calculate the gate resistor for a specific
turn-off loss at unipolar switching the following
rule
thumb
applies:

R0 /15
1 3 R−15 /15
factor
is derived from the relation

VMP − 0V

VMP − − 15V
assum es
that

Miller -

Plateau voltage VMP has a value between +8V and +10V depending on several factors like the IGBT chip and collector current.

Figure 5 proves the rule to be sufficiently

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Datasheet ID: 2ED020I12-F 637584