SGP15N60XKSA1

SGP15N60XKSA1 Datasheet

SGP15N60 SGW15N60

Part	Datasheet
SGP15N60XKSA1	SGP15N60XKSA1 (pdf)

Related Parts	Information
SGW15N60FKSA1	SGW15N60FKSA1

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SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-220-3-1 • Qualified according to JEDEC1 for target applications • Pb-free lead plating RoHS compliant • Complete product spectrum and PSpice Models : PG-TO-247-3 Type SGP15N60 SGW15N60 VCE sat Marking Package 600V 15A 600V 15A 2.3V 2.3V 150°C G15N60 PG-TO-220-3-1 150°C G15N60 PG-TO-247-3 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 15 A, VCC = 50 V, RGE = 25 , start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm in. from case for 10s Symbol VCE IC ICpuls - VGE EAS tSC Ptot Tj , Tstg Ts Value Unit A 31 15 ±20 1 J-STD-020 and JESD-022 2 Allowed number of short circuits <1000 time between short circuits >1s. Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Thermal resistance, junction ambient Conditions RthJC RthJA PG-TO-220-3-1 PG-TO-247-3-21 SGP15N60 SGW15N60 Max. Value Unit 62 40 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Conditions Static Characteristic

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SGP15N60 SGW15N60

Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls - Inverter
• NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability

PG-TO-220-3-1
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating RoHS compliant
• Complete product spectrum and PSpice Models :

PG-TO-247-3

Type SGP15N60 SGW15N60

VCE sat

Marking

Package
600V 15A 600V 15A
2.3V 2.3V
150°C G15N60 PG-TO-220-3-1 150°C G15N60 PG-TO-247-3

Maximum Ratings

Parameter

Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 15 A, VCC = 50 V, RGE = 25 , start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm in. from case for 10s

Symbol VCE IC

ICpuls -

VGE EAS
tSC Ptot

Tj , Tstg Ts

Value

Unit

A 31 15
±20
1 J-STD-020 and JESD-022 2 Allowed number of short circuits <1000 time between short circuits >1s.

Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Thermal resistance, junction ambient

Conditions

RthJC RthJA

PG-TO-220-3-1 PG-TO-247-3-21

SGP15N60 SGW15N60

Max. Value

Unit
62 40

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter

Conditions

Static Characteristic

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Datasheet ID: SGP15N60XKSA1 638554