PTVA093002TCV1R250XTMA1

PTVA093002TCV1R250XTMA1 Datasheet

PTVA093002TC

Part	Datasheet
PTVA093002TCV1R250XTMA1	PTVA093002TCV1R250XTMA1 (pdf)

PDF Datasheet Preview
PTVA093002TC Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 960 MHz The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in multi-standard cellular power applications, it can be used as single-ended or in a Doherty It features dual-path design, input matching, and a thermally-enhanced surface-mount package. Manufactured with advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA093002TC Package H-49248H-4, formed leads Peak/Average Ratio, Gain dB Efficiency % Single-carrier 3GPP WCDMA VDD = 50 V, IDQ = 400 mA, = 758 MHz bandwidth, 10 dB PAR 20 Gain 60 Efficiency PAR CCDF a093002tc-gr1a 30 35 40 45 50 55 Average Output Power dBm • Typical CW performance in a combined-lead 50-ohm single-ended 780 MHz, 50 V - Output power at P1dB = 158 W - Gain = dB - = 52% • Typical pulsed CW performance in a combined-lead 50-ohm single-ended 870 MHz, 50 V - Output power at P3dB = 280 W - Gain = dB - = 50% • Integrated ESD protection, Human Body Model class 2 per JESD22-A114 • Capable of withstanding a 10:1 load mismatch at 50 V, 63 W CW output power • Low thermal resistance • Pb-free and RoHS compliant RF Specifications Single-carrier WCDMA Characteristics device with leads tested in an Doherty production test VDD = 50 V, IDQ = 400 mA, VGSpeak = V, POUT = 63 W average, = 803 MHz. 3GPP WCDMA signal MHz bandwidth, 10 dB PAR CCDF. Characteristic Symbol Min Typ Unit Gain Drain Efficiency Adjacent Channel Power Ratio ACPR All published data at TCASE = 25°C unless otherwise indicated ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 10 PTVA093002TC DC Characteristics Characteristic Conditions Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V BR DSS Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS VDS = 105 V, VGS = 0 V Ordering Information Type and Version PTVA093002TC V1 R250 Order Code Package and Description PTVA093002TCV1R250XTMA1 H-49248H-4, earless, ceramic open-cavity, formed leads, surface mount Shipping Tape & Reel, 250 pcs Data Sheet 2 of 10 PTVA093002TC Typical Performance data taken in a reference test fixture Peak/Average Ratio, Gain dB Single-carrier 3GPP WCDMA VDD = 50 V, IDQ = 400 mA, = 780 MHz bandwidth, 10 dB PAR 20 Gain 16 60 Efficiency PAR CCDF a093002tc-gr1b 30 35 40 45 50 55 Average Output Power dBm Efficiency % Peak/Average Ratio, Gain dB Single-carrier WCDMA Drive-up VDD = 50 V, IDQ = 400 mA, = 803 MHz bandwidth, 10 dB PAR 20 Gain 60 Efficiency PAR CCDF a093002tc-gr1c 30 35 40 45 50 55 Average Output Power dBm Efficiency % Drain Efficiency % ACP Up & Low dBc Single-carrier 3GPP WCDMA VDD = 50 V, IDQ = 400 mA, MHz bandwidth, 10 dB PAR ACP Up ACP Low -70 25 758 MHz 780 MHz 803 MHz

PDF Datasheet Preview

PTVA093002TC

Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 960 MHz

The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in multi-standard cellular power applications, it can be used as single-ended or in a Doherty It features dual-path design, input matching, and a thermally-enhanced surface-mount package. Manufactured with advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

PTVA093002TC Package H-49248H-4, formed leads

Peak/Average Ratio, Gain dB Efficiency %

Single-carrier 3GPP WCDMA

VDD = 50 V, IDQ = 400 mA, = 758 MHz bandwidth, 10 dB PAR
20 Gain
60 Efficiency

PAR CCDF
a093002tc-gr1a
30 35 40 45 50 55

Average Output Power dBm
• Typical CW performance in a combined-lead 50-ohm single-ended 780 MHz, 50 V - Output power at P1dB = 158 W - Gain = dB - = 52%
• Typical pulsed CW performance in a combined-lead 50-ohm single-ended 870 MHz, 50 V - Output power at P3dB = 280 W - Gain = dB - = 50%
• Integrated ESD protection, Human Body Model class 2 per JESD22-A114
• Capable of withstanding a 10:1 load mismatch at 50 V, 63 W CW output power
• Low thermal resistance
• Pb-free and RoHS compliant

RF Specifications

Single-carrier WCDMA Characteristics device with leads tested in an Doherty production test VDD = 50 V, IDQ = 400 mA, VGSpeak = V, POUT = 63 W average, = 803 MHz. 3GPP WCDMA signal MHz bandwidth, 10 dB PAR CCDF.

Characteristic

Symbol Min Typ

Unit

Gain Drain Efficiency Adjacent Channel Power Ratio

ACPR

All published data at TCASE = 25°C unless otherwise indicated ESD Electrostatic discharge sensitive handling precautions!

Data Sheet
1 of 10

PTVA093002TC

DC Characteristics

Characteristic

Conditions

Max Unit

Drain-source Breakdown Voltage

VGS = 0 V, IDS = 10 mA

V BR DSS

Drain Leakage Current

VDS = 50 V, VGS = 0 V

IDSS

VDS = 105 V, VGS = 0 V
Ordering Information

Type and Version

PTVA093002TC V1 R250

Order Code

Package and Description

PTVA093002TCV1R250XTMA1 H-49248H-4, earless, ceramic open-cavity, formed leads, surface mount

Shipping

Tape & Reel, 250 pcs

Data Sheet
2 of 10

PTVA093002TC

Typical Performance data taken in a reference test fixture

Peak/Average Ratio, Gain dB

Single-carrier 3GPP WCDMA

VDD = 50 V, IDQ = 400 mA, = 780 MHz bandwidth, 10 dB PAR
20 Gain 16
60 Efficiency

PAR CCDF
a093002tc-gr1b
30 35 40 45 50 55

Average Output Power dBm

Efficiency % Peak/Average Ratio, Gain dB

Single-carrier WCDMA Drive-up

VDD = 50 V, IDQ = 400 mA, = 803 MHz bandwidth, 10 dB PAR
20 Gain
60 Efficiency

PAR CCDF
a093002tc-gr1c
30 35 40 45 50 55

Average Output Power dBm

Efficiency %

Drain Efficiency %

ACP Up & Low dBc

Single-carrier 3GPP WCDMA

VDD = 50 V, IDQ = 400 mA, MHz bandwidth, 10 dB PAR

ACP Up

ACP Low
-70 25
758 MHz
780 MHz
803 MHz

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Datasheet ID: PTVA093002TCV1R250XTMA1 638522