PTFB082817FHV1R250XTMA1
PTFB082817FHV1R250XTMA1 Datasheet
PTFB082817FH
| Part | Datasheet |
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PTFB082817FHV1R250XTMA1 |
PTFB082817FHV1R250XTMA1 (pdf) |
| Related Parts | Information |
|---|---|
PTFB082817FHV1XWSA1 |
PTFB082817FHV1XWSA1 |
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| PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 821 MHz The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB082817FH Package H-34288-4/2 IMD, ACPR dBc Drain Efficiency % Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = A, = 821 MHz, 3GPP WCDMA signal, PAR = 8:1 dB, 10 MHz carrier spacing, BW = MHz Efficiency IMD Low ACPR IMD Up 34 36 38 40 42 44 46 48 50 52 Average Output Power dBm • Broadband internal matching • Enhanced for use in DPD error correction systems • Typical single-carrier WCDMA performance at 821 MHz, 30 V - Average output power = 50 W - Linear Gain = 19 dB - Efficiency = 35 % - Adjacent channel power = dBc • Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers • Integrated ESD protection • Capable of handling 10:1 VSWR 30 V, 280 W CW output power • Pb-Free and RoHS compliant RF Characteristics Two-carrier WCDMA Specifications tested in Infineon test fixture VDD = 28 V, IDQ = A, POUT = 60 W average, = 821 MHz, 3GPP signal, 10 MHz spacing, channel bandwidth = MHz, peak/average = 8 1 dB CCDF Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min Typ Unit dB % dBc All published data at TCASE = 25°C unless otherwise indicated ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 13 PTFB082817FH Confidential, Limited Internal Distribution DC Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current Conditions VGS = 0 V, IDS = 10 mA VDS = 28 V, VGS = 0 V VDS = 63 V, VGS = 0 V VGS = 10 V, VDS = V VDS = 28 V, IDQ = A VGS = 10 V, VDS = 0 V Symbol V BR DSS IDSS RDS on VGS IGSS Min 65 Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range Thermal Resistance TCASE = 70°C, 250 W CW Symbol Value Ordering Information Type and Version PTFB082817FH V1 PTFB082817FH V1 R250 Package Outline H-34288-4/2 H-34288-4/2 Package Description Ceramic open-cavity, earless flange Ceramic open-cavity, earless flange Shipping Tray Tape & Reel Unit V µA µA W V µA Unit V °C °C °C/W Data Sheet 2 of 13 PTFB082817FH Confidential, Limited Internal Distribution Typical Performance data taken in a production test fixture Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = A, 3GPP WCDMA, PAR=8:1, 10 MHz carrier spacing, BW MHz Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = A, = 821 MHz, 3GPP WCDMA signal, PAR = 8:1 dB, 10 MHz carrier spacing, BW = MHz IMD dBc = 821 Lower = 821 Upper = 806 Lower = 806 Upper = 791 Lower = 791 Upper -55 34 36 38 40 42 44 46 48 50 Output Power avg. dBm Gain dB Gain Efficiency 34 36 38 40 42 44 46 48 50 Average Output Power dBm Efficiency % Gain dB / Efficiency % Two-tone Broadband Performance VDD = 30 V, IDQ = A, POUT = dBm 60 Return Loss Efficiency 40 IMD3 10 776 Gain Frequency MHz |
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