PTFA210601EV4R250FTMA1

PTFA210601EV4R250FTMA1 Datasheet

PTFA210601E PTFA210601F

Part	Datasheet
PTFA210601EV4R250FTMA1	PTFA210601EV4R250FTMA1 (pdf)

Related Parts	Information
PTFA210601F V4	PTFA210601F V4
PTFA210601EV4XWSA1	PTFA210601EV4XWSA1
PTFA210601F V4 R250	PTFA210601F V4 R250

PDF Datasheet Preview
PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 2170 MHz The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210601E Package H-36265-2 PTFA210601F Package H-37265-2 IM3 dBc , ACPR dBc Drain Efficiency % 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing Efficiency ACPR 31 33 35 37 39 41 43 Average Output Power dBm • Thermally-enhanced packages, Pb-free and RoHS-compliant • Broadband internal matching • Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 12 W - Linear Gain = 16 dB - Efficiency = - Intermodulation distortion = dBc - Adjacent channel power = dBc • Typical CW performance, 2170 MHz, 28 V - Output power at = 68 W - Efficiency = • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 28 V, 60 W CW output power RF Characteristics WCDMA Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 550 mA, POUT = 12 W average = 2135 MHz, = 2145 MHz, 3GPP signal, channel bandwidth = MHz, peak/average = 8 dB CCDF Characteristic Symbol Min Typ Unit Gain Drain Efficiency Intermodulation Distortion All published data at TCASE = 25°C unless otherwise indicated See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 10 PTFA210601E PTFA210601F RF Characteristics cont. Two-tone Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, = 2140 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min Typ Unit dB % dBc DC Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current Conditions VGS = 0 V, IDS = 10 mA VDS = 28 V, VGS = 0 V VDS = 63 V, VGS = 0 V VGS = 10 V, VDS = V VDS = 28 V, IDQ = 550 mA VGS = 10 V, VDS = 0 V Symbol V BR DSS Ordering Information Type and Version PTFA210601E V4 PTFA210601F V4 Package Type H-36265-2 H-37265-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Marking PTFA210601E PTFA210601F See Infineon distributor for future availability. Data Sheet 2 of 10 PTFA210601E PTFA210601F Typical Performance data taken in a production test fixture Drain Efficiency % Gain dB , Efficiency % Broadband Performance VDD = 28 V, IDQ = 550 mA, POUT = 41 dBm Return Loss Efficiency Gain 2070 2090 2110 2130 2150 2170 2190 2210 Frequency MHz Input Return Loss dB Intermodulation Distortion dBc 2-Tone Drive-up VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, tone spacing = 1 MHz Efficiency -35 -40 IM3 35 IM5 IM7 15 35 37 39 41 43 45 47 49 Output Power, PEP dBm Drain Efficiency % 3rd Order IMD dBc Two-carrier WCDMA at Selected Biases VDD = 28 V, f = 1960 MHz, 3GPP WCDMA signal, P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ -30 -35 -40 650 mA 450 mA 500 mA -55 31 600 mA 550 mA 33 35 37 39 41 43 Output Power, PEP dBm Gain dB Power Sweep, CW Conditions VDD = 28 V, IDQ = 550 mA, f = 2170 MHz 17 TCASE = 25°C TCASE = 90°C 15 Gain 25 Efficiency 15 10 20 30 40 50 60 70 Output Power W

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PTFA210601E PTFA210601F

Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 2170 MHz

The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

PTFA210601E Package H-36265-2

PTFA210601F Package H-37265-2

IM3 dBc , ACPR dBc Drain Efficiency %
2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing

Efficiency

ACPR
31 33 35 37 39 41 43

Average Output Power dBm
• Thermally-enhanced packages, Pb-free and RoHS-compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 12 W - Linear Gain = 16 dB - Efficiency = - Intermodulation distortion = dBc - Adjacent channel power = dBc
• Typical CW performance, 2170 MHz, 28 V - Output power at = 68 W - Efficiency =
• Integrated ESD protection Human Body Model, Class 2 minimum
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR 28 V, 60 W CW output power

RF Characteristics

WCDMA Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 550 mA, POUT = 12 W average = 2135 MHz, = 2145 MHz, 3GPP signal, channel bandwidth = MHz, peak/average = 8 dB CCDF

Characteristic

Symbol Min Typ

Unit

Gain Drain Efficiency Intermodulation Distortion

All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.

ESD Electrostatic discharge sensitive handling precautions!

Data Sheet
1 of 10

PTFA210601E PTFA210601F

RF Characteristics cont.

Two-tone Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, = 2140 MHz, tone spacing = 1 MHz

Characteristic Gain Drain Efficiency Intermodulation Distortion

Symbol Min Typ

Unit dB % dBc

DC Characteristics

Characteristic Drain-Source Breakdown Voltage Drain Leakage Current

On-State Resistance Operating Gate Voltage Gate Leakage Current

Conditions VGS = 0 V, IDS = 10 mA VDS = 28 V, VGS = 0 V VDS = 63 V, VGS = 0 V VGS = 10 V, VDS = V VDS = 28 V, IDQ = 550 mA VGS = 10 V, VDS = 0 V

Symbol V BR DSS
Ordering Information

Type and Version PTFA210601E V4 PTFA210601F V4

Package Type H-36265-2 H-37265-2

Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended

Marking PTFA210601E PTFA210601F
*See Infineon distributor for future availability. Data Sheet
2 of 10

PTFA210601E PTFA210601F

Typical Performance data taken in a production test fixture

Drain Efficiency %

Gain dB , Efficiency %

Broadband Performance VDD = 28 V, IDQ = 550 mA, POUT = 41 dBm

Return Loss

Efficiency

Gain
2070 2090 2110 2130 2150 2170 2190 2210

Frequency MHz

Input Return Loss dB Intermodulation Distortion dBc
2-Tone Drive-up VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, tone spacing = 1 MHz

Efficiency
-35 -40 IM3
35 IM5

IM7 15
35 37 39 41 43 45 47 49

Output Power, PEP dBm

Drain Efficiency %
3rd Order IMD dBc

Two-carrier WCDMA at Selected Biases VDD = 28 V, f = 1960 MHz, 3GPP WCDMA signal, P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ
-30 -35 -40 650 mA
450 mA 500 mA
-55 31
600 mA 550 mA
33 35 37 39 41 43 Output Power, PEP dBm

Gain dB

Power Sweep, CW Conditions VDD = 28 V, IDQ = 550 mA, f = 2170 MHz
17 TCASE = 25°C

TCASE = 90°C
15 Gain
25 Efficiency
15 10 20 30 40 50 60 70

Output Power W

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Datasheet ID: PTFA210601EV4R250FTMA1 638508