APTM100TDU35PG
APTM100TDU35PG Datasheet
APTM100TDU35PG
| Part | Datasheet |
|---|---|
APTM100TDU35PG |
APTM100TDU35PG (pdf) |
| PDF Datasheet Preview |
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| APTM100TDU35PG Triple dual common source MOSFET Power Module VDSS = 1000V RDSon = typ Tj = 25°C ID = 22A Tc = 25°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies S 1/ S2 S3/ S4 S5/ S6 • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration S1/S 2 S2 G2 S3/S 4 S4 G4 S5/S6 S6 G6 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low 12mm profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current 1000 Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive |
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