MASW-002102-13580 MASW-003102-13590
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MASW-003102-13590G |
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MASW-002102-13580 MASW-003102-13590 HMIC Silicon PIN Diode Switches with Integrated Bias Network • Broad Bandwidth Specified up to 18 GHz • Usable up to 26 GHz • Integrated Bias Network • Low Insertion Loss / High Isolation • Rugged • Fully Monolithic • Glass Encapsulate Construction • RoHS Compliant* and 260°C Reflow Compatible The MASW-002102-13580 and MASW-003102-13590 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing M/A-COM Technology Solutions HMICTM Heterolithic Microwave Integrated Circuit process, US Patent This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. Absolute Maximum -65oC to +125oC -65oC to +150oC +175oC 50V RF Incident Power +33dBm C.W. Bias Current +25°C ±20mA Max. operating conditions for a combination of RF power, D.C. bias and temperature: +33dBm CW 15mA per diode MASW-002102-13580 MASW-003102-13590 Yellow areas denote wire bond pads * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 ADVANCED Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel • Europe Tel: is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY Data Sheets contain information regarding a product M/A-COM Technology • India Tel: • China Tel: Visit for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product s or information contained herein without notice. MASW-002102-13580 MASW-003102-13590 HMIC Silicon PIN Diode Switches with Integrated Bias Network MASW-002102-13580 SPDT Electrical Specifications TAMB = +25oC, 20mA Bias current Parameter Insertion Loss Isolation Input Return Loss Switching Speed1 Frequency 2 GHz 6 GHz 12 GHz 18 GHz 2 GHz 6 GHz 12 GHz 18 GHz 2 GHz 6 GHz 12 GHz 18 GHz Minimum 55 47 40 36 Nominal 60 50 45 40 14 15 50 Maximum Units dB ns MASW-003102-13590 SP3T Electrical Specifications TAMB = +25oC, 20mA Bias current Parameter Frequency Ordering Information Part Number MASW-002102-13580G MASW-002102-13590W MASW-003102-13590G MASW-003102-13590W Package Gel Pack 25 per Waffle Pack 25 per Gel Pack 25 Per Waffle Pack 25 Per ADVANCED Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel • Europe Tel: is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY Data Sheets contain information regarding a product M/A-COM Technology • India Tel: • China Tel: Visit for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product s or information contained herein without notice. |
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