PTFA041501GL V1 R250
PTFA041501GL V1 R250 Datasheet
PTFA041501GL PTFA041501HL
| Part | Datasheet |
|---|---|
PTFA041501GL V1 R250 |
PTFA041501GL V1 R250 (pdf) |
| Related Parts | Information |
|---|---|
|
PTFA041501GL V1 |
PTFA041501GL V1 |
|
PTFA041501HL V1 |
PTFA041501HL V1 |
|
PTFA041501HL V1 R250 |
PTFA041501HL V1 R250 |
| PDF Datasheet Preview |
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| Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 500 MHz PTFA041501GL PTFA041501HL The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They are available in thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA041501GL Package PG-63248-2 PTFA041501HL Package PG-64248-2 Adjacent Channel Power Ratio dB Drain Efficiency % Single-carrier CDMA IS-95 Performance VDD = 28 V, IDQ = 900 mA, = 470 MHz -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 25°C 90°C Efficiency ACPR ALT 38 40 42 44 46 Average Output Power dBm 45 40 35 30 25 20 15 10 5 0 48 • Thermally-enhanced plastic open-cavity EPOC packages with copper flanges, Pb-free and RoHS compliant • Broadband internal matching • Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% • Typical CW performance, 470 MHz, 28 V - Output power at = 175 W - Efficiency = 62% • Integrated ESD protection Human Body Model, Class 1 minimum • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR 28 V, 150 W CW output power RF Characteristics Single-carrier CDMA IS-95 Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 900 mA, POUT = 60 W average, = 470 MHz Characteristic Symbol Min Typ Unit Gain Drain Efficiency Adjacent Channel Power Ratio ACPR All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 11 Confidential, Limited Internal Distribution RF Characteristics cont. Two-tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 900 mA, POUT = 150 W PEP, = 470 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min Ordering Information Type and Version PTFA041501GL V1 PTFA041501HL V1 Package Outline Package Description PG-63248-2 Thermally-enhanced slotted flange, single-ended PG-64248-2 Thermally-enhanced slotted flange, single-ended Shipping Tray Tray Marking PTFA041501GL PTFA041501HL *See Infineon distributor for future availability. Data Sheet 2 of 11 Confidential, Limited Internal Distribution Typical Performance data taken in a production Gain dB , Efficiency % Broadband Circuit Performance VDD = 28 V, IDQ = 900 mA, P1dB Efficiency Return Loss Gain 15 460 Frequency MHz -20 470 Input Return Loss dB Efficiency % , P1dB dBm PTFA041501GL PTFA041501HL Gain dB POUT, Gain & Efficiency at P-1dB vs. Frequency VDD = 28 V, IDQ = 900 mA, Efficiency 25 Gain 460 462 464 466 468 470 Frequency MHz Drain Efficiency % Gain dB Power Sweep at selected IDQ VDD = 28 V, = 470 MHz IDQ = 1125 mA IDQ = 900 mA IDQ = 675 mA 39 41 43 45 47 49 51 53 55 Output Power dBm Gain dB |
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