PTF180101S V1

PTF180101S V1 Datasheet

PTF180101

Part	Datasheet
PTF180101S V1	PTF180101S V1 (pdf)

PDF Datasheet Preview
PTF180101 LDMOS RF Power Field Effect Transistor 10 W, MHz, MHz 10 W, MHz The PTF180101 is a 10 W, GOLDMOS FET device in- • tended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. EDGE EVM Performance EVM and Efficiency vs. Output Power VDD = 28 V, IDQ = A, f = MHz Ef f icienc y EVM RMS Average % x Efficiency % 1 EVM Output Power dBm ESD Electrostatic discharge sensitive device observe handling precautions! Typical EDGE performance - Average output power = W - Gain = dB - Efficiency = 28% - EVM = % Typical WCDMA performance - Average output power = W - Gain = dB - Efficiency = 20% - ACPR = dBc Typical CW performance - Output power at = 15 W - Efficiency = 50% Integrated ESD protection Human Body Model Class 1 minimum Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR 28 V, 10 W CW output power PTF180101S Package 32259 RF Characteristics, EDGE Operation at TCASE = 25°C unless otherwise indicated EDGE Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 180 mA, POUT = 4 W, f = MHz Characteristic Error Vector Magnitude Modulation Spectrum 400 kHz Modulation Spectrum 600 kHz Gain Drain Efficiency Symbol Min Typ EVM RMS ACPR ACPR Units % dBc dB % Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, f = 1990 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Data Sheet Symbol Min Typ Gps ηD IMD Units dB % dBc 2004-02-03 PTF180101 RF Characteristics, WCDMA Operation at TCASE = 25°C unless otherwise indicated WCDMA Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 135 mA, POUT = W, f = 2170 MHz, 3GPP signal, channel bandwidth = MHz, peak/average = dB CCDF Characteristic Adjacent Channel Power Ratio Gain Drain Efficiency Symbol Min Typ ACPR Units dBc dB % Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 135 mA, POUT = 10 W PEP, f = 2170 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency dBc IM3 Intermodulation Distortion Symbol Min Typ Gps ηD IMD Units dB % dBc DC Characteristics at TCASE = 25°C unless otherwise indicated Ordering Information Type PTF180101S Package Outline 32259 Package Outline Specifications 2X 60° X [60° X 4X R0.25 [R.010] MAX. 2X CL Package Description Thermally enhanced, surface mount Marking PTF180101S Package 32259 4X MAX 0°-7° DRAFT ANGLE LEAD COPLANARITY BOTTOM OF LEAD TO BOTTOM OF PACKAGE TYP H-32259-2-1-2307 Notes Unless otherwise specified Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Pins D = drain, S = source, G = gate Lead thickness ± ± Find the latest and most complete information about products and packaging at the Infineon Internet page Data Sheet 2004-02-03 PTF180101 2004-02-03 Previous Version: none 1, 5, 7 Add information about WCDMA operation Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal including a reference to this document to request other information, contact us at +1 877 465 3667 1-877-GOLDMOS USA or +1 408 776 0600 International Edition 2004-02-03 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

PDF Datasheet Preview

PTF180101

LDMOS RF Power Field Effect Transistor 10 W, MHz, MHz 10 W, MHz

The PTF180101 is a 10 W, GOLDMOS FET device in-
• tended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability.

EDGE EVM Performance

EVM and Efficiency vs. Output Power

VDD = 28 V, IDQ = A, f = MHz

Ef f icienc y

EVM RMS Average % x Efficiency %
1 EVM

Output Power dBm

ESD Electrostatic discharge sensitive device observe handling precautions!

Typical EDGE performance - Average output power = W - Gain = dB - Efficiency = 28% - EVM = % Typical WCDMA performance - Average output power = W - Gain = dB - Efficiency = 20% - ACPR = dBc Typical CW performance - Output power at = 15 W - Efficiency = 50% Integrated ESD protection Human Body Model Class 1 minimum Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR 28 V, 10 W CW output power

PTF180101S Package 32259

RF Characteristics, EDGE Operation at TCASE = 25°C unless otherwise indicated

EDGE Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 180 mA, POUT = 4 W, f = MHz

Characteristic Error Vector Magnitude Modulation Spectrum 400 kHz Modulation Spectrum 600 kHz Gain Drain Efficiency

Symbol Min Typ

EVM RMS

ACPR

ACPR

Units % dBc dB %

Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, f = 1990 MHz, tone spacing = 1 MHz

Characteristic Gain Drain Efficiency Intermodulation Distortion

Data Sheet

Symbol Min Typ

Gps ηD IMD

Units dB % dBc
2004-02-03

PTF180101

RF Characteristics, WCDMA Operation at TCASE = 25°C unless otherwise indicated

WCDMA Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 135 mA, POUT = W, f = 2170 MHz, 3GPP signal, channel bandwidth = MHz, peak/average = dB CCDF

Characteristic Adjacent Channel Power Ratio Gain Drain Efficiency

Symbol Min Typ

ACPR

Units dBc dB %

Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 135 mA, POUT = 10 W PEP, f = 2170 MHz, tone spacing = 1 MHz

Characteristic Gain Drain Efficiency dBc IM3 Intermodulation Distortion

Symbol Min Typ

Gps ηD IMD

Units dB % dBc

DC Characteristics at TCASE = 25°C unless otherwise indicated
Ordering Information

Type PTF180101S

Package Outline 32259

Package Outline Specifications
2X 60° X [60° X 4X R0.25 [R.010] MAX.
2X CL

Package Description Thermally enhanced, surface mount

Marking PTF180101S

Package 32259
4X MAX
0°-7° DRAFT ANGLE

LEAD COPLANARITY BOTTOM OF LEAD TO BOTTOM OF PACKAGE TYP

H-32259-2-1-2307

Notes Unless otherwise specified Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Pins D = drain, S = source, G = gate Lead thickness ± ±

Find the latest and most complete information about products and packaging at the Infineon Internet page

Data Sheet
2004-02-03

PTF180101
2004-02-03

Previous Version:
none
1, 5, 7

Add information about WCDMA operation

Data Sheet

We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal including a reference to this document to request other information, contact us at +1 877 465 3667 1-877-GOLDMOS USA or +1 408 776 0600 International

Edition 2004-02-03 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG All Rights Reserved.

Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office

Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived PTF180101SV1 Datasheet file may be downloaded here without warranties.

Datasheet ID: PTF180101SV1 638488