KSP24TA
KSP24TA Datasheet
KSP24
| Part | Datasheet |
|---|---|
KSP24TA |
KSP24TA (pdf) |
| Related Parts | Information |
|---|---|
|
KSP24BU |
KSP24BU |
| PDF Datasheet Preview |
|---|
| KSP24 VHF Transistor KSP24 TO-92 Base Emitter Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO IEBO IC PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Ta=25°C Derate Above 25°C TJ TSTG RTH j-a Junction Temperature Storage Temperature Thermal Resistance, Junction to Ambient Value 40 30 100 350 135 -55~150 357 Units V mA mW/°C °C °C °C/W Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE fT Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Current Gain Bandwidth Product IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=15V, IE=0 VCE=10V, IC=8mA VCE=10V, IC=8mA, f=100MHz Output Capacitance VCB=10V, IE=0, f=1MHz Conversion Gain 213 to 45MHz VCC=20V, IC=8mA Oscillator Injection=150mV Conversion Gain 60 to 45MHz VCC=20V, IC=8mA Oscillator Injection=150mV Min. 40 30 30 400 Typ. 620 24 29 Max. 50 Units V nA 2001 Fairchild Semiconductor Corporation KSP24 Typical Characteristics VCE sat ,VBE sat [mA], SATURATION VOLTAGE hFE, DC CURRENT GAIN |
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