PTF080101S V1

PTF080101S V1 Datasheet

PTF080101S

Part	Datasheet
PTF080101S V1	PTF080101S V1 (pdf)

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PTF080101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 960 MHz The PTF080101S is a 10-watt, internally-matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest operation possible. Full gold metallization ensures excellent device lifetime and reliability. PTF080101S Package 32259 RMS EVM Average Drain Efficiency % Typical EDGE Performance VDD = 28 V, IDQ = 150 mA, f = MHz TCASE = 25°C TCASE = 85°C Ef f iciency Output Power dBm • Thermally-enhanced packaging • Broadband internal matching • Typical EDGE performance - Average output power = 5 W - Gain = dB - Efficiency = 38% • Typical CW performance - Output power at = 13 W - Gain = dB - Efficiency = 55% • Integrated ESD protection Human Body Model, Class 1 minimum • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR 28 V, 10 W CW output power ESD Electrostatic discharge sensitive handling precautions! RF Characteristics at TCASE = 25°C unless otherwise indicated EDGE Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 150 mA, POUT = W, f = MHz Characteristic Symbol Min Typ Max Units Error Vector Magnitude EVM RMS Modulation Spectrum 400 kHz ACPR Modulation Spectrum 600 kHz ACPR Gain Drain Efficiency Data Sheet 1 of 9 2004-10-05 PTF080101S RF Characteristics cont. Two-Tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 150 mA, POUT = 10 W PEP, f = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Gain Drain Efficiency Intermodulation Distortion Ordering Information Type PTF080101S Package Outline 32259 Package Description Thermally-enhanced SMD, single-ended Marking PTF080101S Data Sheet 2 of 9 2004-10-05 PTF080101S Modulation Spectrum dBc Typical Performance measurements taken in production test fixture Modulation Spectrum dBc EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 150 m A, f = MHz TCASE = 25°C -55 TCASE = 85°C 400 kHz -65 50 Ef f iciency 600 kHz Output Power dBm Drain Efficiency % EVM RMS Average % EVM & Modulation Spectrum Performance VDD = 28 V, POUT = 4 W, f = MHz 400 KHz 600 KHz -75 Quiscent Drain Current A Drain Efficiency % Gain dB Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 150 mA, f = 960 MHz 19 Gain 18 16 Ef f iciency 14 20 Output Power dBm 70 60 50 40 30 20 10 0 45 Drain Efficiency % Gain dB , Return Loss dB Broadband Performance VDD = 28 V, IDQ = 150 mA, POUT = 10 W Ef f iciency Gain Return Loss 840 860 880 900 920 940 960 Frequency MHz All published data at TCASE = 25°C unless otherwise indicated Data Sheet 3 of 9

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PTF080101S

Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 960 MHz

The PTF080101S is a 10-watt, internally-matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest operation possible. Full gold metallization ensures excellent device lifetime and reliability.

PTF080101S Package 32259

RMS EVM Average Drain Efficiency %

Typical EDGE Performance VDD = 28 V, IDQ = 150 mA, f = MHz

TCASE = 25°C

TCASE = 85°C

Ef f iciency

Output Power dBm
• Thermally-enhanced packaging
• Broadband internal matching
• Typical EDGE performance - Average output power = 5 W - Gain = dB - Efficiency = 38%
• Typical CW performance - Output power at = 13 W - Gain = dB - Efficiency = 55%
• Integrated ESD protection Human Body Model, Class 1 minimum
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR 28 V, 10 W CW output power

ESD Electrostatic discharge sensitive handling precautions!

RF Characteristics at TCASE = 25°C unless otherwise indicated

EDGE Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 150 mA, POUT = W, f = MHz

Characteristic

Symbol Min Typ

Max Units

Error Vector Magnitude

EVM RMS

Modulation Spectrum 400 kHz

ACPR

Modulation Spectrum 600 kHz

ACPR

Gain Drain Efficiency

Data Sheet
1 of 9
2004-10-05

PTF080101S

RF Characteristics cont.

Two-Tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 150 mA, POUT = 10 W PEP, f = 960 MHz, tone spacing = 1 MHz

Characteristic

Symbol Min Typ

Gain Drain Efficiency

Intermodulation Distortion
Ordering Information

Type PTF080101S

Package Outline 32259

Package Description Thermally-enhanced SMD, single-ended

Marking PTF080101S

Data Sheet
2 of 9
2004-10-05

PTF080101S

Modulation Spectrum dBc

Typical Performance measurements taken in production test fixture

Modulation Spectrum dBc

EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 150 m A, f = MHz

TCASE = 25°C -55 TCASE = 85°C
400 kHz -65
50 Ef f iciency
600 kHz

Output Power dBm

Drain Efficiency % EVM RMS Average %

EVM & Modulation Spectrum Performance VDD = 28 V, POUT = 4 W, f = MHz
400 KHz
600 KHz -75

Quiscent Drain Current A

Drain Efficiency %

Gain dB

Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 150 mA, f = 960 MHz
19 Gain 18
16 Ef f iciency
14 20

Output Power dBm
70 60 50 40 30 20 10 0 45

Drain Efficiency % Gain dB , Return Loss dB

Broadband Performance VDD = 28 V, IDQ = 150 mA, POUT = 10 W

Ef f iciency

Gain

Return Loss
840 860 880 900 920 940 960

Frequency MHz

All published data at TCASE = 25°C unless otherwise indicated

Data Sheet
3 of 9

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Datasheet ID: PTF080101SV1 638486