HGT1S2N120CN

HGT1S2N120CN Datasheet

HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT

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HGT1S2N120CN	HGT1S2N120CN (pdf)

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HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT March 2005 HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT • 13A, 1200V, TC = 25°C • 1200V Switching SOA Capability • Typical Fall Time 360ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss • Avalanche Rated • Temperature Compensating SABER Model Thermal Impedance SPICE Model • Related Literature • TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Informations HGTP2N120CN HGT1S2N120CN Package TO-220AB TO-262 Brand 2N120CN Note When ordering, use the entire part number. Add the suffix 9A to obtain the TO263AB and TO-252AA variant in tape and reel, e.g., HGT1S2N120CNS9A. The HGTP2N120CN and HGT1S2N120CN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49313 COLLECTOR FLANGE TO-220 COLLECTOR FLANGE TO-262 E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 2005 Fairchild Semiconductor Corporation HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT Absolute Maximum Ratings TC = 25°C, Unless Otherwise Specified Parameter HGTP2N120CN HGT1S2N120CN Units BVCES IC25 IC110 ICM VGES VGEM SSOA PD EAV tJ, TSTG TL TPKG tSC Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C Collector Current Pulsed Note 1 Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching SOA Operating Area at TJ = 150°C Figure 2 Power Dissipation Total at TC = 25°C Power Dissipation Derating TC > 25°C Forward Voltage Avalanche Energy Note 2 Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s Package Body for 10s, see Tech Brief 334 Short Circuit Withstand Time Note 3 at VGE = 15V 1200 13 7 20 ±20 ±30 13A at 1200V 104 18 -55 to 150 300 260 W/°C mJ °C

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HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT

March 2005

HGTP2N120CN, HGT1S2N120CN
13A, 1200V, NPT Series N-Channel IGBT
• 13A, 1200V, TC = 25°C
• 1200V Switching SOA Capability
• Typical Fall Time 360ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER Model Thermal Impedance SPICE Model
• Related Literature
• TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Informations

HGTP2N120CN HGT1S2N120CN

Package

TO-220AB TO-262

Brand
2N120CN
Note When ordering, use the entire part number. Add the suffix 9A to obtain the TO263AB and TO-252AA variant in tape and reel, e.g., HGT1S2N120CNS9A.

The HGTP2N120CN and HGT1S2N120CN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49313

COLLECTOR FLANGE

TO-220

COLLECTOR FLANGE

TO-262 E

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,598,461 4,682,195 4,803,533 4,888,627
4,417,385 4,605,948 4,684,413 4,809,045 4,890,143
4,430,792 4,620,211 4,694,313 4,809,047 4,901,127
4,443,931 4,631,564 4,717,679 4,810,665 4,904,609
4,466,176 4,639,754 4,743,952 4,823,176 4,933,740
4,516,143 4,639,762 4,783,690 4,837,606 4,963,951
4,532,534 4,641,162 4,794,432 4,860,080 4,969,027
4,587,713 4,644,637 4,801,986 4,883,767
2005 Fairchild Semiconductor Corporation

HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT

Absolute Maximum Ratings TC = 25°C, Unless Otherwise Specified

Parameter

HGTP2N120CN HGT1S2N120CN

Units

BVCES

IC25 IC110 ICM VGES VGEM SSOA PD

EAV tJ, TSTG

TL TPKG tSC

Collector to Emitter Voltage

Collector Current Continuous At TC = 25°C At TC = 110°C

Collector Current Pulsed Note 1

Gate to Emitter Voltage Continuous

Gate to Emitter Voltage Pulsed

Switching SOA Operating Area at TJ = 150°C Figure 2 Power Dissipation Total at TC = 25°C Power Dissipation Derating TC > 25°C Forward Voltage Avalanche Energy Note 2

Operating and Storage Junction Temperature Range

Maximum Lead Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s Package Body for 10s, see Tech Brief 334

Short Circuit Withstand Time Note 3 at VGE = 15V
1200
13 7 20 ±20 ±30 13A at 1200V 104 18 -55 to 150
300 260

W/°C
mJ °C

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Datasheet ID: HGT1S2N120CN 633893