IRGP6650D-EPBF

IRGP6650D-EPBF Datasheet

IRGP6650DPbF IRGP6650D-EPbF

Part	Datasheet
IRGP6650D-EPBF	IRGP6650D-EPBF (pdf)

Related Parts	Information
IRGP6650DPBF	IRGP6650DPBF

PDF Datasheet Preview
VCES = 600V IC = 50A, TC =100°C IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode tSC TJ max = 175°C VCE ON typ. = 1.65V IC = 35A Applications • Welding • H Bridge Converters n-channel G Gate E C G IRGP6650DPbF C Collector E Emitter Features Low VCE ON and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE ON Temperature Co-efficient Lead-free, RoHS compliant High Efficiency in a Wide Range of Applications Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Performance and High Power Capability Enables Short Circuit Protection Operation Excellent Current Sharing in Parallel Operation Environmentally friendly Base part number IRGP6650DPbF IRGP6650D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube Tube Orderable Part Number IRGP6650DPbF IRGP6650D-EPbF Absolute Maximum Ratings Parameter VCES IC TC = 25°C IC TC = 100°C ICM ILM Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V IFRM TC = 100°C PD TC = 25°C PD TC = 100°C TJ TSTG Diode Repetitive Peak Forward Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 600 80 50 105 140 25 140 ±20 306 153 -40 to +175 300 in. 1.6mm from case 10 lbf•in N•m Units V

PDF Datasheet Preview

VCES = 600V IC = 50A, TC =100°C

IRGP6650DPbF IRGP6650D-EPbF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
tSC TJ max = 175°C

VCE ON typ. = 1.65V IC = 35A

Applications
• Welding
• H Bridge Converters
n-channel

G Gate

E C G IRGP6650DPbF

C Collector

E Emitter

Features Low VCE ON and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters

Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit Positive VCE ON Temperature Co-efficient Lead-free, RoHS compliant

High Efficiency in a Wide Range of Applications

Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Performance and High Power Capability Enables Short Circuit Protection Operation Excellent Current Sharing in Parallel Operation Environmentally friendly

Base part number

IRGP6650DPbF IRGP6650D-EPbF

Package Type

TO-247AC TO-247AD

Standard Pack

Form

Quantity

Tube

Tube

Orderable Part Number

IRGP6650DPbF IRGP6650D-EPbF

Absolute Maximum Ratings

Parameter

VCES IC TC = 25°C IC TC = 100°C ICM ILM

Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V

IFRM TC = 100°C

PD TC = 25°C PD TC = 100°C TJ TSTG

Diode Repetitive Peak Forward

Diode Maximum Forward Current 

Continuous Gate-to-Emitter Voltage

Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw

Max. 600 80 50 105 140
25 140 ±20 306 153 -40 to +175
300 in. 1.6mm from case 10 lbf•in N•m

Units V

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Datasheet ID: IRGP6650D-EPBF 638361