SPD50N03S207GBTMA1
SPD50N03S207GBTMA1 Datasheet
SPD50N03S2-07 G
| Part | Datasheet |
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SPD50N03S207GBTMA1 |
SPD50N03S207GBTMA1 (pdf) |
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| OptiMOS&!Power-Transistor Feature % N-Channel % Enhancement mode % Excellent Gate Charge x RDS on product FOM %!Superior thermal resistance %!175°C operating temperature % Avalanche rated % dv/dt rated U g2kwj j qj fi tM X htruqnfsy SPD50N03S2-07 G Product Summary RDS on m" Ph-TO252-3 Type Package SPD50N03S2-07 L Ph-TO252-3 Marking PN0307 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=50 A , VDD=25V, RGS=25" IS=50A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 50 200 ±20 136 +175 55/175/56 Unit A kV/µs V W °C QS-0Z-2008 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPD50N03S2-07 G Values Unit min. typ. max. |
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