KSD1273P

KSD1273P Datasheet

KSD1273

Part	Datasheet
KSD1273P	KSD1273P (pdf)

Related Parts	Information
KSD1273QTU	KSD1273QTU
KSD1273Q	KSD1273Q
KSD1273QYDTU	KSD1273QYDTU
KSD1273PTU	KSD1273PTU
KSD1273PTSTU	KSD1273PTSTU
KSD1273OTU	KSD1273OTU

PDF Datasheet Preview
KSD1273 KSD1273 High hFE, AF Power Amplifier • ”Full PAK” Package for Simplified Mounting Only by a Screw, Requires no Insulator. TO-220F 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCEO ICBO ICEO IEBO hFE VCE sat fT Collector-Emitter Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product IC = 25mA, IB = 0 VCB = 80V, IE = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A hFE Classification Classification hFE Q 500 ~ 1000 P 800 ~ 1500 Value 80 60 6 3 6 1 2 40 150 - 55 ~ 150 Units V A W °C °C Min. 60 Typ. 30 Max. 100 2500 Units V µA µA µA V MHz O 1200 ~ 2500 2001 Fairchild Semiconductor Corporation Typical Characteristics Ic[A], COLLECTOR CURRENT I = 1.2mA I = 1mA I = 800uA I = 600uA I = 400uA B I = 200uA VCE[V], COLLECTOR-EMITTER VOLTAGE

PDF Datasheet Preview

KSD1273

KSD1273

High hFE, AF Power Amplifier
• ”Full PAK” Package for Simplified Mounting Only by a Screw, Requires no Insulator.

TO-220F
1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC ICP IB PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Base Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCEO ICBO ICEO IEBO hFE VCE sat fT

Collector-Emitter Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product

IC = 25mA, IB = 0 VCB = 80V, IE = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A
hFE Classification

Classification hFE

Q 500 ~ 1000

P 800 ~ 1500

Value 80 60 6 3 6 1 2 40 150
- 55 ~ 150

Units V A W °C °C

Min. 60

Typ. 30

Max.
100 2500

Units V µA µA µA

V MHz

O 1200 ~ 2500
2001 Fairchild Semiconductor Corporation

Typical Characteristics

Ic[A], COLLECTOR CURRENT

I = 1.2mA

I = 1mA

I = 800uA

I = 600uA

I = 400uA B

I = 200uA

VCE[V], COLLECTOR-EMITTER VOLTAGE

More datasheets: BGA 619 E6327 | MAX14591EWA+ | DB25P | DAMA15SNMBK52 | 76650-0002 | 201CNQ045 | 201CNQ040 | 201CNQ050 | 201CNQ035 | KSD1273QTU

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived KSD1273P Datasheet file may be downloaded here without warranties.

Datasheet ID: KSD1273P 634233