SPD30N03S2L07GBTMA1
SPD30N03S2L07GBTMA1 Datasheet
SPD30N03S2L-07 G
| Part | Datasheet |
|---|---|
SPD30N03S2L07GBTMA1 |
SPD30N03S2L07GBTMA1 (pdf) |
| PDF Datasheet Preview |
|---|
| Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS on product FOM • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-free lead plating RoHS compliant SPD30N03S2L-07 G Product Summary RDS on PG-TO252-3 Type Package Marking SPD30N03S2L-07G PG-TO252-3 2N03L07 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=30 A , VDD=25V, IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAR dv/dt VGS Ptot Tj , Tstg Value 30 120 ±20 136 +175 55/175/56 Unit A kV/µs V W °C 02-09-2008 SPD30N03S2L-07 G Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 Values Unit min. typ. max. |
| More datasheets: UFB200FA20 | QRC1113 | HT-152 | HT-151 | LE7942BDJCT | LE7942B-1DJCT | LE7942B-2DJCT | LE7942B-1DJC | LE7942B-2DJC | LE7942BDJC |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SPD30N03S2L07GBTMA1 Datasheet file may be downloaded here without warranties.