QRC1113

QRC1113 Datasheet

QRC1113

Part	Datasheet
QRC1113	QRC1113 (pdf)

PDF Datasheet Preview
PACKAGE DIMENSIONS PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH QRC1113 PIN 1 PIN 2 PIN 3 PIN 4 4X REFLECTIVE SURFACE PIN1 ANODE PIN2 CATHODE PIN3 EMITTER PIN4 COLLECTOR SCHEMATIC Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless otherwise specified. The QRC1113 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle in diameter. • Phototransistor output • High sensitivity • Low cost plastic housing 2001 Fairchild Semiconductor Corporation DS300352 7/02/01 1 OF 4 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD VCEO VECO IC PD Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec 50 5 100 30 5 20 100 NOTES Derate power dissipation linearly mW/°C above 25°C. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron 1/16” 1.6mm minimum from housing. D is the distance from the assembly face to the reflective surface. Cross talk is the photo current measured with current to the input diode and no reflecting surface. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface. ELECTRICAL / OPTICAL CHARACTERISTICS TA = 25°C PARAMETER TEST CONDITIONS EMITTER Forward Voltage IF = 40 mA VR = V IF = 20 mA IC = 1 mA BVCEO Emitter-Collector Breakdown Voltage IE = mA BVECO Collector-Emitter Dark Current VCE = 10 V, IF = 0 mA ICEO COUPLED On-state Collector Current IF=40mA,VCE=5V,D IC ON

PDF Datasheet Preview

PACKAGE DIMENSIONS

PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH

QRC1113

PIN 1 PIN 2

PIN 3 PIN 4 4X

REFLECTIVE SURFACE

PIN1 ANODE PIN2 CATHODE PIN3 EMITTER PIN4 COLLECTOR

SCHEMATIC

Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions
unless otherwise specified.

The QRC1113 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle in diameter.
• Phototransistor output
• High sensitivity
• Low cost plastic housing
2001 Fairchild Semiconductor Corporation DS300352 7/02/01
1 OF 4

PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified

Symbol TOPR TSTG TSOL-I TSOL-F

IF VR PD

VCEO VECO

IC PD

Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec
50 5 100
30 5 20 100

NOTES Derate power dissipation linearly mW/°C above 25°C. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron 1/16” 1.6mm minimum from housing. D is the distance from the assembly face to the reflective surface. Cross talk is the photo current measured with current to the input diode and no reflecting surface. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface.

ELECTRICAL / OPTICAL CHARACTERISTICS TA = 25°C

PARAMETER

TEST CONDITIONS

EMITTER Forward Voltage

IF = 40 mA

VR = V IF = 20 mA

IC = 1 mA

BVCEO

Emitter-Collector Breakdown Voltage

IE = mA

BVECO

Collector-Emitter Dark Current

VCE = 10 V, IF = 0 mA

ICEO

COUPLED On-state Collector Current

IF=40mA,VCE=5V,D

IC ON

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Datasheet ID: QRC1113 634524