SPD11N10
SPD11N10 Datasheet
SPD11N10 SPU11N10
| Part | Datasheet |
|---|---|
SPD11N10 |
SPD11N10 (pdf) |
| Related Parts | Information |
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SPU11N10 |
SPU11N10 |
| PDF Datasheet Preview |
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| Preliminary data Power-Transistor N-Channel Enhancement mode operating temperature Avalanche rated dv/dt rated P-TO251 SPD11N10 SPU11N10 Product Summary 100 V RDS on 170 m P-TO252 Type SPD11N10 SPU11N10 Package P-TO252 P-TO251 Ordering Code Q67042-S4121 Q67042-S4122 Marking 11N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=10.5 A , VDD=25V, RGS=25 ID puls EAS dv/dt IS=10.5A, VDS=80V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation Ptot TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 Tj , Tstg Value ±20 50 +175 55/175/56 Unit A mJ kV/µs V W °C 2002-01-31 Thermal Characteristics Parameter Preliminary data Symbol Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 1 RthJC RthJA SPD11N10 SPU11N10 Values Unit min. typ. max. 3 K/W - 100 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. |
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