DSEE6-06CC

DSEE6-06CC Datasheet

DSEE 6-06CC

Part	Datasheet
DSEE6-06CC	DSEE6-06CC (pdf)

PDF Datasheet Preview
ADVANCE TECHNICAL INFORMATION DSEE 6-06CC HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface IFAV = 6 A VRRM = 600 V trr = 20 ns VRRMc V VRRM V Type DSEE 6-06CC ISOPLUS 220 E153432 Symbol IFRMS IFAVM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight RthJC RthCH Conditions Maximum Ratings Isolated back surface* TC = 150°C rectangular, d = TVJ = 25°C non-repetitive IAS = A L = 180 µH VA = 1.5•VR typ. f = 10 kHz repetitive TC = 25°C 50/60 Hz RMS IISOL 1 mA Mounting force typical A λ Silicon chip on Direct-Copper-Bond substrate - High power dissipation g- Isolated mounting surface - 2500V electrical isolation s°C de°C λ Low cathode to tab capacitance <15pF λ Planar passivated chips λ Very short recovery time λ Extremely low switching losses 2500 w / N / lb λ Low IRM-values λ Soft recovery behaviour λ Epoxy meets UL 94V-0 r Conditions fo TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM Not IF = 10 A; TVJ = 125°C TVJ = 25°C Characteristic Values typ. max. λ Antiparallel diode for high frequency switching devices λ Antisaturation diode λ Snubber diode λ Free wheeling diode in converters and motor control circuits λ Rectifiers in switch mode power supplies SMPS λ Inductive heating λ Uninterruptible power supplies UPS λ Ultrasonic cleaners and welders IF = 1 A -di/dt = 50 A/µs; VR = 30 V TVJ = 25°C VR = 100 V IF = 10 A -diF/dt = 100 A/µs

PDF Datasheet Preview

ADVANCE TECHNICAL INFORMATION

DSEE 6-06CC

HiPerDynFREDTM Epitaxial Diode

ISOPLUS220TM

Electrically Isolated Back Surface

IFAV = 6 A VRRM = 600 V trr = 20 ns

VRRMc V

VRRM V

Type DSEE 6-06CC

ISOPLUS 220 E153432

Symbol IFRMS IFAVM EAS

IAR TVJ TVJM Tstg Ptot VISOL FC Weight

RthJC RthCH

Conditions

Maximum Ratings

Isolated back surface*

TC = 150°C rectangular, d = TVJ = 25°C non-repetitive IAS = A L = 180 µH VA = 1.5•VR typ. f = 10 kHz repetitive

TC = 25°C 50/60 Hz RMS IISOL 1 mA Mounting force typical

A λ Silicon chip on Direct-Copper-Bond
substrate - High power dissipation
g- Isolated mounting surface
- 2500V electrical isolation
s°C
de°C
λ Low cathode to tab capacitance <15pF λ Planar passivated chips λ Very short recovery time λ Extremely low switching losses
2500
w / N / lb
λ Low IRM-values λ Soft recovery behaviour λ Epoxy meets UL 94V-0
r Conditions
fo TVJ = 25°C VR = VRRM

TVJ = 150°C VR = VRRM

Not IF = 10 A;

TVJ = 125°C TVJ = 25°C

Characteristic Values typ. max.
λ Antiparallel diode for high frequency switching devices
λ Antisaturation diode λ Snubber diode λ Free wheeling diode in converters
and motor control circuits λ Rectifiers in switch mode power
supplies SMPS λ Inductive heating λ Uninterruptible power supplies UPS λ Ultrasonic cleaners and welders

IF = 1 A -di/dt = 50 A/µs;

VR = 30 V TVJ = 25°C

VR = 100 V IF = 10 A -diF/dt = 100 A/µs

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Datasheet ID: DSEE6-06CC 644171