IRLML6402TR

IRLML6402TR Datasheet

IRLML6402

Part	Datasheet
IRLML6402TR	IRLML6402TR (pdf)

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l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile <1.1mm l Available in Tape and Reel l Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3 , is ideal for applications where printed circuit board space is at a premium. The low profile <1.1mm of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Absolute Maximum Ratings VDS ID TA = 25°C ID TA= 70°C IDM PD = 25°C PD = 70°C EAS VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS -4.5V Continuous Drain Current, VGS -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy- Gate-to-Source Voltage Junction and Storage Temperature Range PD - 93755D IRLML6402 Power MOSFET VDSS = -20V RDS on = Micro3 Max. -20 -22 11 ± 12 -55 to + 150 Units V W/°C mJ V °C Thermal Resistance Parameter Maximum Junction-to-Ambient Typ. 75 Max. 100 Units °C/W 12/14/11 IRLML6402 Electrical Characteristics TJ = 25°C unless otherwise specified Parameter V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS on Static Drain-to-Source On-Resistance VGS th gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td on tr td off tf Ciss Coss Crss Min. Typ. Max. -20 -25 -100 12 350 48 588 381 633 145 110

PDF Datasheet Preview

l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile <1.1mm
l Available in Tape and Reel
l Fast Switching

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3 , is ideal for applications where printed circuit board space is at a premium. The low profile <1.1mm of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

Absolute Maximum Ratings

VDS ID TA = 25°C ID TA= 70°C IDM PD = 25°C PD = 70°C

EAS VGS TJ, TSTG

Parameter Drain- Source Voltage Continuous Drain Current, VGS -4.5V Continuous Drain Current, VGS -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy- Gate-to-Source Voltage Junction and Storage Temperature Range

PD - 93755D

IRLML6402

Power MOSFET

VDSS = -20V

RDS on =

Micro3

Max. -20 -22 11 ± 12 -55 to + 150

Units V

W/°C
mJ V °C

Thermal Resistance

Parameter

Maximum Junction-to-Ambient

Typ. 75

Max. 100

Units °C/W
12/14/11

IRLML6402

Electrical Characteristics TJ = 25°C unless otherwise specified

Parameter V BR DSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient

RDS on

Static Drain-to-Source On-Resistance

VGS th gfs

Gate Threshold Voltage Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg Qgs Qgd td on tr td off tf Ciss Coss Crss

Min. Typ. Max. -20 -25 -100 12 350 48 588 381 633 145 110

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Datasheet ID: IRLML6402TR 638366