IXFR24N80P

IXFR24N80P Datasheet

PolarHVTM HiPerFET IXFR 24N80P Power MOSFET

Part	Datasheet
IXFR24N80P	IXFR24N80P (pdf)

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PolarHVTM HiPerFET IXFR 24N80P Power MOSFET Electrically Isolated Back Surface N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode V = 800 V DSS ID25 = RDS on 420 mΩ 200 ns V DSS VDGR VGSS V IDM IAR EAR EAS dv/dt PD TJ TJM Tstg T TSOLD VISOL Weight Test Conditions = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 MΩ Continuous Transient 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/us, VDD VDSS, TJ 150°C, RG = 2 Ω TC = 25°C mm in. from case for 10 s Plastic body for 10 s 50/60 Hz, RMS, 1 minute Mounting force Maximum Ratings ISOPLUS247 IXFR E153432 ±30 ±40 Isolated Tab G = Gate D = Drain S = Source -55 +150 -55 +150 300 260 2500 V/ns °C °C °C °C °C V~ N/lb g

PDF Datasheet Preview

PolarHVTM HiPerFET IXFR 24N80P Power MOSFET

Electrically Isolated Back Surface

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

V = 800 V DSS

ID25 =

RDS on 420 mΩ
200 ns

V DSS

VDGR

VGSS V

IDM IAR EAR EAS
dv/dt

PD TJ TJM Tstg T

TSOLD VISOL

Weight

Test Conditions
= 25°C to 150°C

TJ = 25°C to 150°C RGS = 1 MΩ

Continuous

Transient
25°C

TC = 25°C, pulse width limited by TJM

TC = 25°C

TC = 25°C TC = 25°C

IS IDM, di/dt 100 A/us, VDD VDSS, TJ 150°C, RG = 2 Ω

TC = 25°C
mm in. from case for 10 s Plastic body for 10 s 50/60 Hz, RMS, 1 minute

Mounting force

Maximum Ratings ISOPLUS247 IXFR

E153432
±30
±40

Isolated Tab

G = Gate D = Drain

S = Source
-55 +150
-55 +150 300 260
2500

V/ns
°C °C °C °C °C V~

N/lb g

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Datasheet ID: IXFR24N80P 644289