IRGP6630DPBF

IRGP6630DPBF Datasheet

IRGP6630DPbF IRGP6630D-EPbF

Part	Datasheet
IRGP6630DPBF	IRGP6630DPBF (pdf)

Related Parts	Information
IRGP6630D-EPBF	IRGP6630D-EPBF

PDF Datasheet Preview
VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode tSC TJ max = 175°C VCE ON typ. = 1.65V IC = 18A Applications • Welding • H Bridge Converters n-channel G Gate E C G IRGP6630DPbF C Collector E Emitter Features Low VCE ON and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE ON Temperature Co-efficient Lead-free, RoHS compliant High Efficiency in a Wide Range of Applications Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Performance and High Power Capability Enables Short Circuit Protection Operation Excellent Current Sharing in Parallel Operation Environmentally friendly Base part number IRGP6630DPbF IRGP6630D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube Tube Orderable Part Number IRGP6630DPbF IRGP6630D-EPbF Absolute Maximum Ratings Parameter VCES IC TC = 25°C IC TC = 100°C ICM ILM IFRM TC = 100°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Repetitive Peak Forward PD TC = 25°C PD TC = 100°C TJ TSTG Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 600 47 30 54 72 15

PDF Datasheet Preview

VCES = 600V IC = 30A, TC =100°C

IRGP6630DPbF IRGP6630D-EPbF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
tSC TJ max = 175°C

VCE ON typ. = 1.65V IC = 18A

Applications
• Welding
• H Bridge Converters
n-channel

G Gate

E C G IRGP6630DPbF

C Collector

E Emitter

Features Low VCE ON and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters

Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit Positive VCE ON Temperature Co-efficient Lead-free, RoHS compliant

High Efficiency in a Wide Range of Applications

Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Performance and High Power Capability Enables Short Circuit Protection Operation Excellent Current Sharing in Parallel Operation Environmentally friendly

Base part number

IRGP6630DPbF IRGP6630D-EPbF

Package Type

TO-247AC TO-247AD

Standard Pack

Form

Quantity

Tube

Tube

Orderable Part Number

IRGP6630DPbF IRGP6630D-EPbF

Absolute Maximum Ratings

Parameter

VCES IC TC = 25°C

IC TC = 100°C

ICM ILM IFRM TC = 100°C

Collector-to-Emitter Voltage Continuous Collector Current

Continuous Collector Current

Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Repetitive Peak Forward

PD TC = 25°C PD TC = 100°C TJ TSTG

Diode Maximum Forward Current 

Continuous Gate-to-Emitter Voltage

Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw

Max. 600 47
30 54 72 15

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Datasheet ID: IRGP6630DPBF 638359