MSRTA500120 A thru MSRTA500160 A
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MSRTA500140(A) (pdf) |
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MSRTA500120(A) |
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MSRTA500160(A) |
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Silicon Standard Recovery Diode Features • High Surge Capability • Types up to 1600 V VRRM MSRTA500120 A thru MSRTA500160 A VRRM = 600 V - 1600 V IF = 500 A Heavy Three Tower Package ts.com Maximum ratings, at Tj = 25 °C, unless otherwise specified n Parameter Conditions MSRTA500120 A MSRTA500140 A Continuous forward current p Surge non-repetitive forward current, Half Sine Wave m Operating temperature o Storage temperature VRRM VRMS VDC IF,SM Tj Tstg TC 125 °C TC = 25 °C, tp = ms 1200 848 1200 500 4400 -40 to 175 -40 to 175 1400 990 1400 500 4400 -40 to 175 -40 to 175 ec Electrical characteristics, at Tj = 25 °C, unless otherwise specified lin Parameter Diode forward voltage Symbol VF IR Conditions MSRTA500120 A MSRTA500140 A IF = 500 A, Tj = 25 °C VR = 600 V, Tj = 25 °C VR = 600 V, Tj = 150 °C Thermal characteristics Thermal resistance, junction case RthJC MSRTA500160 A 1600 1131 1600 500 4400 -40 to 175 -40 to 175 MSRTA500160 A 25 10 Unit V A °C °C Unit V uA mA °C/W |
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