KSD2058YTU
KSD2058YTU Datasheet
KSD2058
| Part | Datasheet |
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KSD2058YTU |
KSD2058YTU (pdf) |
| Related Parts | Information |
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KSD2058YTSTU |
KSD2058YTSTU |
| PDF Datasheet Preview |
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| KSD2058 KSD2058 Low Frequency Power Amplifier TO-220F 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition ICBO IEBO VCEO hFE VCE Sat VBE on fT Cob tON tSTG tF Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time VCB = 60V, IE = 0 VEB = 7V, IC = 0 IC = 50mA, IB = 0 VCE = 5V, IC = 0.5A IC = 2A, IB = 0.2A VCE = 5V, IC = 0.5A VCE = 5V, IC = 0.5A VCB = 10V, f = 1MHz VCC = 30V, IC = 2A IB1 = - IB2 = 0.2A RL = hFE Classification Classification hFE O 60 ~ 120 Y 100 ~ 200 Value 60 7 3 25 150 - 55 ~ 150 Units V A W °C °C Min. Typ. Max. 10 1 Units µA mA V G 150 ~ 300 2000 Fairchild Semiconductor International KSD2058 Typical Characteristics Ic[A], COLLECTOR CURRENT IB = 90mA IB = 80mA IB = 70mA IB = 60mA IB = 50mA IB = 40mA IB = 30mA IB = 20mA IB = 10mA IB = 0mA VCE[V], COLLECTOR-EMITTER VOLTAGE Figure Static Characteristic |
| More datasheets: 62435-101 | 62435-101LF | 62435-102 | 62435-104 | 62435-105 | RUSB250 | 8512061AGILFT | 8512061AGILF | 01530002H | 01530003H |
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