SPP80N06S2-05

SPP80N06S2-05 Datasheet


SPP80N06S2-05 SPB80N06S2-05

Part Datasheet
SPP80N06S2-05 SPP80N06S2-05 SPP80N06S2-05 (pdf)
Related Parts Information
SPB80N06S2-05 SPB80N06S2-05 SPB80N06S2-05
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Power-Transistor

Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated

SPP80N06S2-05 SPB80N06S2-05

Product Summary

RDS on max. SMD version

P- TO263 -3-2

P- TO220 -3-1

Type SPP80N06S2-05 SPB80N06S2-05

Package
Ordering Code

P- TO220 -3-1 Q67040-S4245

P- TO263 -3-2 Q67040-S4255

Marking 2N0605

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Continuous drain current 1

TC=25°C

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=80 A , VDD=25V,

IS=80A, VDS=44V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage Power dissipation

TC=25

Operating and storage temperature IEC climatic category DIN IEC 68-1

ID puls

EAR dv/dt

VGS Ptot

Tj , Tstg

Value
80 320
±20 300
+175 55/175/56

Unit A
kV/µs V W °C
2003-04-24

Thermal Characteristics Parameter

Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
min. footprint 6 cm2 cooling area 3

SPP80N06S2-05 SPB80N06S2-05

Values

Unit
min. typ. max.

RthJC RthJA

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

Static Characteristics
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Datasheet ID: SPP80N06S2-05 638279