IPP90R500C3
Part | Datasheet |
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IPP90R500C3 (pdf) |
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CoolMOS Power Transistor Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1 for target applications • Pb-free lead plating RoHS compliant • Ultra low gate charge IPP90R500C3 Product Summary V DS T J=25°C R DS on ,max T J= 25°C Q g,typ 900 V 68 nC PG-TO220 CoolMOS 900V is designed for • Quasi Resonant Flyback / Forward topologies • PC Silverbox and consumer applications • Industrial SMPS Type IPP90R500C3 Package PG-TO220 Marking 9R500C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2 Avalanche energy, single pulse Avalanche energy, repetitive 2 ,3 AR Avalanche current, repetitive 2 ,3 AR MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS T C=25 °C T C=100 °C T C=25 °C I D=2.2 A, V DD=50 V I D=2.2 A, V DD=50 V V DS=0...400 V static AC f>1 Hz Power dissipation Operating and storage temperature P tot T C=25 °C T J, T stg Mounting torque M3 and M3.5 screws Value 11 24 388 50 ±20 ±30 156 -55 150 60 Unit A A V/ns V W °C Ncm |
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