KST5088/5089
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KST5088MTF (pdf) |
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KST5089MTF |
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KST5088/5089 KST5088/5089 Low Noise Transistor NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO Collector-Base Voltage KST5088 KST5089 VCEO Collector-Emitter Voltage KST5088 KST5089 VEBO IC PC TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature SOT-23 1 Base Emitter Collector Value 35 30 30 25 50 350 150 Units V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO Collector-Base Breakdown Voltage KST5088 KST5089 IC=100µA, IE=0 BVCEO Collector-Emitter Breakdown Voltage KST5088 KST5089 IC=1mA, IB=0 ICBO IEBO hFE Collector Cut-off Current KST5088 KST5089 Emitter Cut-off Current DC Current Gain KST5088 KST5089 KST5088 KST5089 KST5088 KST5089 VCB=20V, IE=0 VCB=15V, IE=0 VEB=3V, IC=0 VCE=5V, IC=100µA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE sat VBE sat fT Cob NF Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage |
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