IPP08CN10L G
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IPP08CN10L G (pdf) |
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Power-Transistor Features • N-channel, logic level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on Product Summary V DS R DS on ,max ID • 175 °C operating temperature • Pb-free lead plating RoHS compliant • Qualified according to JEDEC1 for target application • Ideal for high-frequency switching and synchronous rectification Type IPP08CN10L G IPP08CN10L G 100 V 8 m 98 A Package Marking PG-TO220-3 08CN10L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C T C=100 °C Pulsed drain current2 I D,pulse T C=25 °C Avalanche energy, single pulse I D=98 A, R GS=25 : dv /dt I D=95 A, V DS=80 V, di /dt =100 A/us, T j,max=175 °C Gate source voltage3 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 98 70 392 254 ±20 167 -55 175 55/175/56 Unit A mJ kV/us V W °C 2007-08-30 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction 4 ambient R thJC R thJA |
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