IPP08CN10L G

IPP08CN10L G Datasheet


IPP08CN10L G

Part Datasheet
IPP08CN10L G IPP08CN10L G IPP08CN10L G (pdf)
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Power-Transistor

Features
• N-channel, logic level
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on

Product Summary V DS R DS on ,max ID
• 175 °C operating temperature
• Pb-free lead plating RoHS compliant
• Qualified according to JEDEC1 for target application
• Ideal for high-frequency switching and synchronous rectification

Type

IPP08CN10L G

IPP08CN10L G
100 V 8 m 98 A

Package Marking

PG-TO220-3 08CN10L

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C

T C=100 °C

Pulsed drain current2

I D,pulse T C=25 °C

Avalanche energy, single pulse

I D=98 A, R GS=25 :
dv /dt

I D=95 A, V DS=80 V, di /dt =100 A/us, T j,max=175 °C

Gate source voltage3

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value 98 70 392 254
±20 167 -55 175 55/175/56

Unit A
mJ kV/us V W °C
2007-08-30

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction 4 ambient

R thJC R thJA
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Datasheet ID: IPP08CN10LG 638240