PN2222_J61Z
PN2222_J61Z Datasheet
PN2222
| Part | Datasheet |
|---|---|
PN2222_J61Z |
PN2222_J61Z (pdf) |
| PDF Datasheet Preview |
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| PN2222 PN2222 General Purpose Transistor NPN Epitaxial Silicon Transistor TO-92 Emitter Base Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE Collector-Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain VCE sat * Collector-Emitter Saturation Voltage VBE sat * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance * Pulse Test Pulse Duty IC=10µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=50V, IE=0 VEB=3V, IC=0 VCE=10V, IC=0.1mA VCE=10V, *IC=150mA IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1MHz Value 60 30 5 600 625 150 -55 ~ 150 Units V mA mW °C °C Min. 60 30 5 35 100 Max. 10 300 1 2 8 Units V µA nA V MHz pF 2004 Fairchild Semiconductor Corporation PN2222 Package Dimensions TO-92 1.27TYP 1.27TYP R2.29 3.86MAX 2002 Fairchild Semiconductor Corporation Dimensions in Millimeters |
| More datasheets: FCBGD10CD1C20 | FCBGD10CD1C10 | FCBGD10CD1C30 | FCBGD10CD1CX0 | FCBGD10CD1C03 | FCBGD10CD1C50 | HGTP7N60B3D | CA07A32-6SBF80 | M68ICS05C | 6300010952 |
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