HGTP7N60B3D

HGTP7N60B3D Datasheet

HGTP7N60B3D, HGT1S7N60B3DS

Part	Datasheet
HGTP7N60B3D	HGTP7N60B3D (pdf)

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Data Sheet HGTP7N60B3D, HGT1S7N60B3DS December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC at rated current. The IGBT is developmental type TA49190. The diode used in anti-parallel with the IGBT is the RHRD660 TA49057 . The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49191. Ordering Information PACKAGE BRAND HGTP7N60B3D HGT1S7N60B3DS TO-220AB ALT TO-263AB G7N60B3D NOTE When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e., HGT1S7N60B3DS9A. • 14A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. 120ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB ALTERNATE VERSION COLLECTOR FLANGE JEDEC TO-263AB COLLECTOR FLANGE FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627

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Data Sheet

HGTP7N60B3D, HGT1S7N60B3DS

December 2001
14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC at rated current. The IGBT is developmental type TA49190. The diode used in anti-parallel with the IGBT is the RHRD660 TA49057 .

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49191.
Ordering Information

PACKAGE

BRAND

HGTP7N60B3D HGT1S7N60B3DS

TO-220AB ALT TO-263AB

G7N60B3D
NOTE When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e., HGT1S7N60B3DS9A.
• 14A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. 120ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode

Packaging

JEDEC TO-220AB ALTERNATE VERSION COLLECTOR

FLANGE

JEDEC TO-263AB

COLLECTOR FLANGE

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627

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Datasheet ID: HGTP7N60B3D 633907