IPB100N06S3-03
IPB100N06S3-03 Datasheet
IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03
| Part | Datasheet |
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IPB100N06S3-03 |
IPB100N06S3-03 (pdf) |
| Related Parts | Information |
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IPP100N06S3-03 |
IPP100N06S3-03 |
IPI100N06S3-03 |
IPI100N06S3-03 |
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| Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product RoHS compliant • 100% Avalanche tested IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 Product Summary V DS R DS on ,max SMD version ID 55 V 100 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3PN0603 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Conditions Continuous drain current1 T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2 Pulsed drain current2 Avalanche energy, single pulse2 I D,pulse E AS T C=25 °C I D=50 A Avalanche current, single pulse Gate source voltage3 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value Unit 2390 ±20 -55 +175 55/175/56 2007-11-07 IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 Parameter Conditions min. Values typ. Unit max. Thermal characteristics2 Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded Removal of ordering code Update of Infineon Logo Implementation of avalanche current single pulse Removal of ESD class Update of Infineon address Removal of foot note 3, avalanche diagrams Update Qrr and trr typ Update of disclaimer Implementation of RoHS and AEC logo, update of feature list Update of data sheet layout Adaptation of Ias from 200A to 100A implementation of footnote 2 for Eas specification removal of Vdg specification from data sheet page 9 2007-11-07 |
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