IPP77N06S3-09
IPP77N06S3-09 Datasheet
IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09
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IPP77N06S3-09 |
IPP77N06S3-09 (pdf) |
| Related Parts | Information |
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IPI77N06S3-09 |
IPI77N06S3-09 |
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IPB77N06S3-09 |
IPB77N06S3-09 |
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| Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product RoHS compliant • 100% Avalanche tested IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 Product Summary V DS R DS on ,max SMD version ID 55 V 77 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N0609 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Conditions Continuous drain current T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2 Pulsed drain current1 Avalanche energy, single pulse1 I D,pulse E AS T C=25 °C I D=38.5 A Avalanche current, single pulse Gate source voltage2 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value Unit ±20 -55 +175 55/175/56 2007-11-07 IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 Parameter Conditions min. Values typ. Unit max. Thermal characteristics1 Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA Removal of ordering code Update of Infineon Logo Implementation of avalanche current single pulse Removal of ESD class Update of Infineon address Removal of foot note 3, avalanche diagrams Update of trr and Qrr typ Update of disclaimer Implementation of RoHS and AEC logo, update of feature list Update of data sheet layout Adaptation of Ias implementation of footnote 2 for Eas specification removal of Vdg specification from data sheet page 9 2007-11-07 |
| More datasheets: ICS661GI | ICS661GIT | ICS276PG | ICS276PGI | ICS276PGT | ICS276PGIT | MA180018 | 04-7012-0000 | 04-6337-0000 | 04-6040-0000 |
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