IPB77N06S3-09

IPB77N06S3-09 Datasheet

IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09

Part	Datasheet
IPB77N06S3-09	IPB77N06S3-09 (pdf)

Related Parts	Information
IPP77N06S3-09	IPP77N06S3-09
IPI77N06S3-09	IPI77N06S3-09

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Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product RoHS compliant • 100% Avalanche tested IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 Product Summary V DS R DS on ,max SMD version ID 55 V 77 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N0609 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Conditions Continuous drain current T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2 Pulsed drain current1 Avalanche energy, single pulse1 I D,pulse E AS T C=25 °C I D=38.5 A Avalanche current, single pulse Gate source voltage2 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value Unit ±20 -55 +175 55/175/56 2007-11-07 IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 Parameter Conditions min. Values typ. Unit max. Thermal characteristics1 Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA Removal of ordering code Update of Infineon Logo Implementation of avalanche current single pulse Removal of ESD class Update of Infineon address Removal of foot note 3, avalanche diagrams Update of trr and Qrr typ Update of disclaimer Implementation of RoHS and AEC logo, update of feature list Update of data sheet layout Adaptation of Ias implementation of footnote 2 for Eas specification removal of Vdg specification from data sheet page 9 2007-11-07

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Power-Transistor

Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product RoHS compliant
• 100% Avalanche tested

IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09

Product Summary V DS R DS on ,max SMD version ID
55 V 77 A

PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

Type IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09

Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

Marking 3N0609

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Conditions

Continuous drain current

T C=25 °C, V GS=10 V

T C=100 °C, V GS=10 V2

Pulsed drain current1 Avalanche energy, single pulse1

I D,pulse E AS

T C=25 °C I D=38.5 A

Avalanche current, single pulse

Gate source voltage2

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value

Unit
±20
-55 +175
55/175/56
2007-11-07

IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09

Parameter

Conditions
min.

Values typ.

Unit max.

Thermal characteristics1

Thermal resistance, junction - case R thJC

Thermal resistance, junction ambient, leaded

R thJA
Removal of ordering code

Update of Infineon Logo Implementation of avalanche
current single pulse

Removal of ESD class

Update of Infineon address Removal of foot note 3, avalanche
diagrams

Update of trr and Qrr typ

Update of disclaimer Implementation of RoHS and AEC
logo, update of feature list

Update of data sheet layout

Adaptation of Ias implementation of footnote 2 for

Eas specification removal of Vdg specification from
data sheet
page 9
2007-11-07

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IPB77N06S3-09 Datasheet file may be downloaded here without warranties.

Datasheet ID: IPB77N06S3-09 638148