IPSH4N03LA G
IPSH4N03LA G Datasheet
IPDH4N03LA G IPSH4N03LA G
| Part | Datasheet |
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IPSH4N03LA G |
IPSH4N03LA G (pdf) |
| Related Parts | Information |
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IPDH4N03LAG |
IPDH4N03LAG |
| PDF Datasheet Preview |
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| Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications • N-channel, logic level • Excellent gate charge x R DS on product FOM • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating RoHS compliant IPDH4N03LA G IPSH4N03LA G Product Summary V DS R DS on ,max SMD Version ID 25 V 90 A Type IPDH4N03LA G IPSH4N03LA G Package PG-TO252-3-11 Ordering Code Q67042-S4250 Marking H4N03LA PG-TO251-3-11 Q67042-S4254 H4N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 Pulsed drain current I D,pulse T C=100 °C T C=25 °C3 Avalanche energy, single pulse I D=90 A, R GS=25 dv /dt I D=90 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 90 77 360 150 ±20 94 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2008-04-14 IPDH4N03LA G IPSH4N03LA G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area5 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage |
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