IPDH4N03LAG

IPDH4N03LAG Datasheet

IPDH4N03LA G IPSH4N03LA G

Part	Datasheet
IPDH4N03LAG	IPDH4N03LAG (pdf)

Related Parts	Information
IPSH4N03LA G	IPSH4N03LA G

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Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications • N-channel, logic level • Excellent gate charge x R DS on product FOM • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating RoHS compliant IPDH4N03LA G IPSH4N03LA G Product Summary V DS R DS on ,max SMD Version ID 25 V 90 A Type IPDH4N03LA G IPSH4N03LA G Package PG-TO252-3-11 Ordering Code Q67042-S4250 Marking H4N03LA PG-TO251-3-11 Q67042-S4254 H4N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 Pulsed drain current I D,pulse T C=100 °C T C=25 °C3 Avalanche energy, single pulse I D=90 A, R GS=25 dv /dt I D=90 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 90 77 360 150 ±20 94 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2008-04-14 IPDH4N03LA G IPSH4N03LA G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area5 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage

PDF Datasheet Preview

Power-Transistor

Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1 for target applications
• N-channel, logic level
• Excellent gate charge x R DS on product FOM
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating RoHS compliant

IPDH4N03LA G IPSH4N03LA G

Product Summary V DS R DS on ,max SMD Version ID
25 V 90 A

Type

IPDH4N03LA G

IPSH4N03LA G

Package

PG-TO252-3-11
Ordering Code Q67042-S4250

Marking

H4N03LA

PG-TO251-3-11 Q67042-S4254 H4N03LA

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C2

Pulsed drain current

I D,pulse

T C=100 °C T C=25 °C3

Avalanche energy, single pulse

I D=90 A, R GS=25
dv /dt

I D=90 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C

Gate source voltage4

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value 90 77 360 150
±20 94 -55 175 55/175/56

Unit A
mJ kV/µs V W °C
2008-04-14

IPDH4N03LA G IPSH4N03LA G

Parameter

Symbol Conditions
min.

Values typ.

Unit max.

Thermal characteristics

Thermal resistance, junction - case R thJC

SMD version, device on PCB

R thJA minimal footprint
6 cm2 cooling area5

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

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Datasheet ID: IPDH4N03LAG 638140