IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01
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IPI120N04S4-01M (pdf) |
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Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product RoHS compliant • 100% Avalanche tested IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 Product Summary V DS R DS on ,max SMD version ID 40 V 120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120N04S4-01 IPI120N04S4-01 IPP120N04S4-01 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0401 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Conditions Continuous drain current1 T C=25°C, V GS=10V Value Unit T C=100°C, V GS=10V2 Pulsed drain current2 I D,pulse T C=25°C Avalanche energy, single pulse2 I D=60A Avalanche current, single pulse Gate source voltage Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category DIN IEC 68-1 - ±20 -55 +175 55/175/56 2010-04-12 IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 Parameter Conditions min. Values typ. Unit max. Thermal characteristics2 Thermal resistance, junction - case R thJC - Thermal resistance, junction ambient, leaded |
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