IPI120N04S4-01M

IPI120N04S4-01M Datasheet


IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01

Part Datasheet
IPI120N04S4-01M IPI120N04S4-01M IPI120N04S4-01M (pdf)
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Power-Transistor

Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product RoHS compliant
• 100% Avalanche tested

IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01

Product Summary V DS R DS on ,max SMD version ID
40 V 120 A

PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

Type IPB120N04S4-01 IPI120N04S4-01 IPP120N04S4-01

Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

Marking 4N0401

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Conditions

Continuous drain current1

T C=25°C, V GS=10V

Value

Unit

T C=100°C, V GS=10V2

Pulsed drain current2

I D,pulse T C=25°C

Avalanche energy, single pulse2

I D=60A

Avalanche current, single pulse

Gate source voltage

Power dissipation

P tot

T C=25°C

Operating and storage temperature T j, T stg -

IEC climatic category DIN IEC 68-1 -
±20
-55 +175
55/175/56
2010-04-12

IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01

Parameter

Conditions
min.

Values typ.

Unit max.

Thermal characteristics2

Thermal resistance, junction - case R thJC -

Thermal resistance, junction ambient, leaded
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Datasheet ID: IPI120N04S4-01M 638144