IPS031N03L G

IPS031N03L G Datasheet

IPS031N03L G

Part	Datasheet
IPS031N03L G	IPS031N03L G (pdf)

PDF Datasheet Preview
Type Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1 for target applications • N-channel, logic level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on • Avalanche rated • Pb-free plating RoHS compliant Product Summary V DS R DS on ,max ID Type IPD031N03L G • Pb-free plating RoHS compliant IPS031N03L G IPD031N03L G IPS031N03L G 30 V 90 A Package Marking PG-TO252-3-11 031N03L PG-TO251-3-11 031N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C I D,pulse I AS E AS dv /dt T C=25 °C T C=25 °C I D=90 A, R GS=25 I D=90 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C Value 90 79 400 90 60 ±20 Unit A mJ kV/µs V 2008-04-15 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 IPD031N03L G IPS031N03L G

PDF Datasheet Preview

Type

Power-Transistor

Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1 for target applications
• N-channel, logic level
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on
• Avalanche rated
• Pb-free plating RoHS compliant

Product Summary V DS R DS on ,max ID

Type

IPD031N03L G
• Pb-free plating RoHS compliant

IPS031N03L G

IPD031N03L G IPS031N03L G
30 V 90 A

Package Marking

PG-TO252-3-11 031N03L

PG-TO251-3-11 031N03L

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

V GS=10 V, T C=25 °C

V GS=10 V, T C=100 °C

V GS=4.5 V, T C=25 °C

V GS=4.5 V, T C=100 °C

I D,pulse I AS E AS
dv /dt

T C=25 °C

T C=25 °C

I D=90 A, R GS=25

I D=90 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C

Value 90 79 400 90 60
±20

Unit A
mJ kV/µs V
2008-04-15

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

IPD031N03L G IPS031N03L G

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Datasheet ID: IPS031N03LG 638138