IPP048N06L G
IPP048N06L G Datasheet
IPP048N06L G IPB048N06L G
| Part | Datasheet |
|---|---|
IPP048N06L G |
IPP048N06L G (pdf) |
| Related Parts | Information |
|---|---|
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IPB048N06LGATMA1 |
IPB048N06LGATMA1 |
| PDF Datasheet Preview |
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| Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant IPP048N06L G IPB048N06L G Product Summary V DS R DS on ,max SMDversion ID 60 V m 100 A Type IPP048N06L IPB048N06L Package Marking PG-TO220-3 048N06L PG-TO263-3 048N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category DIN IEC 68-1 I D,pulse E AS dv /dt T C=25 °C1 T C=100 °C T C=25 °C2 I D=100 A, R GS=25 : I D=100 A, V DS=48 V, di /dt =200 A/us, T j,max=175 °C P tot T C=25 °C T j, T stg 1 Current is limited by bondwire with an RthJC=0.5 the chip is able to carry 161A 2 See figure 3 Value 100 400 810 ±20 300 -55 175 55/175/56 Unit A mJ kV/us V W °C 2007-08-29 IPP048N06L G IPB048N06L G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics |
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