IPB048N06LGATMA1

IPB048N06LGATMA1 Datasheet

IPP048N06L G IPB048N06L G

Part	Datasheet
IPB048N06LGATMA1	IPB048N06LGATMA1 (pdf)

Related Parts	Information
IPP048N06L G	IPP048N06L G

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Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant IPP048N06L G IPB048N06L G Product Summary V DS R DS on ,max SMDversion ID 60 V m 100 A Type IPP048N06L IPB048N06L Package Marking PG-TO220-3 048N06L PG-TO263-3 048N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category DIN IEC 68-1 I D,pulse E AS dv /dt T C=25 °C1 T C=100 °C T C=25 °C2 I D=100 A, R GS=25 : I D=100 A, V DS=48 V, di /dt =200 A/us, T j,max=175 °C P tot T C=25 °C T j, T stg 1 Current is limited by bondwire with an RthJC=0.5 the chip is able to carry 161A 2 See figure 3 Value 100 400 810 ±20 300 -55 175 55/175/56 Unit A mJ kV/us V W °C 2007-08-29 IPP048N06L G IPB048N06L G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics

PDF Datasheet Preview

Power-Transistor

Features
• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant

IPP048N06L G IPB048N06L G

Product Summary V DS R DS on ,max SMDversion ID
60 V m 100 A

Type

IPP048N06L

IPB048N06L

Package Marking

PG-TO220-3 048N06L

PG-TO263-3 048N06L

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

Pulsed drain current Avalanche energy, single pulse

Gate source voltage

Power dissipation Operating and storage temperature IEC climatic category DIN IEC 68-1

I D,pulse E AS dv /dt

T C=25 °C1

T C=100 °C T C=25 °C2

I D=100 A, R GS=25 :

I D=100 A, V DS=48 V, di /dt =200 A/us, T j,max=175 °C

P tot

T C=25 °C

T j, T stg
1 Current is limited by bondwire with an RthJC=0.5 the chip is able to carry 161A 2 See figure 3

Value 100 400 810
±20
300 -55 175 55/175/56

Unit A
mJ kV/us V

W °C
2007-08-29

IPP048N06L G IPB048N06L G

Parameter

Symbol Conditions
min.

Values typ.

Unit max.

Thermal characteristics

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Datasheet ID: IPB048N06LGATMA1 638117