IPB80N07S405ATMA1

IPB80N07S405ATMA1 Datasheet

IPB80N07S4-05 IPI80N07S4-05, IPP80N07S4-05

Part	Datasheet
IPB80N07S405ATMA1	IPB80N07S405ATMA1 (pdf)

Related Parts	Information
IPI80N07S405AKSA1	IPI80N07S405AKSA1

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OptiMOS -T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product RoHS compliant • 100% Avalanche tested IPB80N07S4-05 IPI80N07S4-05, IPP80N07S4-05 Product Summary VDS RDS on ,max SMD version ID 75 V mW 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N07S4-05 IPI80N07S4-05 IPP80N07S4-05 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0705 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Conditions Continuous drain current1 T C=25°C, V GS=10V T C=100°C, V GS=10V2 Pulsed drain current2 Avalanche energy, single pulse2 Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C I D=40A P tot T C=25°C T j, T stg - Value 80 320 240 65 ±20 150 -55 +175 Unit A mJ A V W °C 2014-07-14 IPB80N07S4-05 IPI80N07S4-05, IPP80N07S4-05 Parameter Conditions min. Values typ. Unit max. Thermal characteristics2 Thermal resistance, junction - case R thJC - Thermal resistance, junction ambient, leaded R thJA SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current

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OptiMOS -T2 Power-Transistor

Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product RoHS compliant
• 100% Avalanche tested

IPB80N07S4-05 IPI80N07S4-05, IPP80N07S4-05

Product Summary VDS RDS on ,max SMD version ID
75 V mW 80 A

PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

Type IPB80N07S4-05 IPI80N07S4-05 IPP80N07S4-05

Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

Marking 4N0705

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Conditions

Continuous drain current1

T C=25°C, V GS=10V

T C=100°C, V GS=10V2

Pulsed drain current2 Avalanche energy, single pulse2 Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature

I D,pulse T C=25°C

I D=40A

P tot

T C=25°C

T j, T stg -

Value 80
320 240 65 ±20 150 -55 +175

Unit A
mJ A V W °C
2014-07-14

IPB80N07S4-05 IPI80N07S4-05, IPP80N07S4-05

Parameter

Conditions
min.

Values typ.

Unit max.

Thermal characteristics2

Thermal resistance, junction - case R thJC -

Thermal resistance, junction ambient, leaded

R thJA

SMD version, device on PCB

R thJA minimal footprint
6 cm2 cooling area3

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current

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Datasheet ID: IPB80N07S405ATMA1 638114