IRFZ34EPBF

IRFZ34EPBF Datasheet

IRFZ34EPbF

Part	Datasheet
IRFZ34EPBF	IRFZ34EPBF (pdf)

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling l Lead-Free Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter ID TC = 25°C Continuous Drain Current, VGS 10V Silicon Limited ID TC = 100°C Continuous Drain Current, VGS 10V Pulsed Drain Current PD = 25°C Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage d Single Pulse Avalanche Energy Ã Avalanche Current Repetitive Avalanche Energy e Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD - 94789 IRFZ34EPbF Power MOSFET VDSS = 60V RDS on = ID = 28A TO-220AB

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l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Ease of Paralleling
l Lead-Free

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an
extremely efficient device for use in a wide variety of
applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Parameter

ID TC = 25°C Continuous Drain Current, VGS 10V Silicon Limited

ID TC = 100°C Continuous Drain Current, VGS 10V
Pulsed Drain Current

PD = 25°C Power Dissipation

Linear Derating Factor

VGS EAS IAR EAR
dv/dt TJ TSTG

Gate-to-Source Voltage
d Single Pulse Avalanche Energy Ã Avalanche Current Repetitive Avalanche Energy e Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Junction-to-Case-to-Sink, Flat, Greased Surface Junction-to-Ambient

PD - 94789

IRFZ34EPbF

Power MOSFET

VDSS = 60V

RDS on =

ID = 28A

TO-220AB

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Datasheet ID: IRFZ34EPBF 638339