BSS 123
Part | Datasheet |
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BSS123 E6433 (pdf) |
Related Parts | Information |
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BSS123E6327 |
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BSS123L6433HTMA1 |
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BSS123L7874XT |
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BSS123L6327HTSA1 |
PDF Datasheet Preview |
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SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8...2.0V BSS 123 Type BSS 123 Type BSS 123 BSS 123 VDS 100 V Ordering Code Q62702-S512 Q67000-S245 RDS on Package SOT-23 Tape and Reel Information E6327 E6433 Pin 1 G Pin 2 S Marking SAs Pin 3 D Maximum Ratings Parameter Drain source voltage Drain-gate voltage RGS = 20 Gate source voltage ESD Sensitivity HBM as per MIL-STD 883 Continuous drain current TA = 28 DC drain current, pulsed TA = 25 Power dissipation TA = 25 Symbol VDS V IDpuls Ptot Data Sheet Values Unit ± 20 Class 1 A BSS 123 1 For package mounted on aluminium 15 mm x mm x mm Tj Tstg RthJA RthJSR Values Unit -55 + 150 -55 + 150 55 / 150 / 56 Electrical Characteristics, at Tj = unless otherwise specified Parameter min. Values Unit typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = mA, Tj = 25 Gate threshold voltage VGS=VDS, ID = 1 mA Zero gate voltage drain current VDS = 100 V, VGS = 0 V, Tj = 25 VDS = 100 V, VGS = 0 V, Tj = 125 VDS = 20 V, VGS = 0 V, Tj = 25 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = A VGS = V, ID = A V BR DSS VGS th IDSS - IGSS - RDS on - Data Sheet |
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