IHD10N60RA
IHD10N60RA Datasheet
IHD10N60RA
| Part | Datasheet |
|---|---|
IHD10N60RA |
IHD10N60RA (pdf) |
| PDF Datasheet Preview |
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| IGBT IHD10N60RA IHD10N60RA Features: Type IHD10N60RA 600V 10A 1.45V Tvjmax 175°C Marking H10R60A Package PG-TO252-3 IHD10N60RA Parameter Collector-emitter voltage Gate-emitter voltage Short circuit withstand time Allowed number of short circuits < 1000 Time between short circuits 1.0s Operating junction temperature Storage temperature Soldering temperature, reflow soldering MSL1 according to JEDEC J-STA-020 Symbol VCE IC ICpuls IF VGE Ptot Tvj Tstg Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, min. footprint junction - ambient Thermal resistance, Cu on PCB junction - ambient Symbol Conditions Rth j-c Rth j-c Rth j-a Rth j-a IHD10N60RA Value Unit ±20 Unit Parameter Symbol Conditions Collector-emitter breakdown voltage V BR CES Collector-emitter saturation voltage VCEsat Diode forward voltage Gate-emitter threshold voltage VGE th Zero gate voltage collector current ICES Gate-emitter leakage current |
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